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HUF75945S3ST fiches techniques PDF

Fairchild Semiconductor - 38A/ 200V/ 0.071 Ohm/ N-Channel/ UltraFET Power MOSFETs

Numéro de référence HUF75945S3ST
Description 38A/ 200V/ 0.071 Ohm/ N-Channel/ UltraFET Power MOSFETs
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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HUF75945S3ST fiche technique
Data Sheet
HUF75842P3, HUF75842S3S
December 1999
File Number 4815
43A, 150V, 0.042 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUF75842P3
GATE
SOURCE
HUF75842S3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.042Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75842P3
TO-220AB
75842P
HUF75842S3S
TO-263AB
75842S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75842S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUF75842P3
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
(TC=
(TC=
2150o0CoC, V, VGGSS==101V0V) )(F(Figiugruere2)2).
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ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
150
150
±20
43
30
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
230
1.53
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300 oC
260 oC
NOTES:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
4-1 CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER™ is a trademark of Analogy, Inc. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999.

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