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Número de pieza | HUF75829D3 | |
Descripción | 18A/ 150V/ 0.110 Ohm/ N-Channel/ UltraFET Power MOSFET | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HUF75829D3 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! Data Sheet
HUF75842P3, HUF75842S3S
December 2001
43A, 150V, 0.042 Ohm, N-Channel,
UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
HUF75842P3
HUF75842S3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.042Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75842P3
TO-220AB
75842P
HUF75842S3S
TO-263AB
75842S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75842S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUF75842P3
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
(TC=
(TC=
2150o0CoC, ,VVGGSS==101V0V) )(F(Figiugruere2)2).
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ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
150
150
±20
43
30
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
230
1.53
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300 oC
260 oC
NOTES:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75842P3, HUF75842S3S Rev. B
1 page HUF75842P3, HUF75842S3S
Typical Performance Curves (Continued)
1.2
ID = 250µA
7000
VGS = 0V, f = 1MHz
1.1
1.0
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
VDD = 75V
8
1000
COSS ≅ CDS + CGD
CISS = CGS + CGD
100
50
0.1
CRSS = CGD
1.0 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
6
4
WAVEFORMS IN
DESCENDING ORDER:
2 ID = 43A
ID = 22A
0
0 20 40 60 80
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
©2001 Fairchild Semiconductor Corporation
HUF75842P3, HUF75842S3S Rev. B
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet HUF75829D3.PDF ] |
Número de pieza | Descripción | Fabricantes |
HUF75829D3 | 18A/ 150V/ 0.110 Ohm/ N-Channel/ UltraFET Power MOSFET | Fairchild Semiconductor |
HUF75829D3 | 18A/ 150V/ 0.110 Ohm/ N-Channel/ UltraFET Power MOSFET | Intersil Corporation |
HUF75829D3S | 18A/ 150V/ 0.110 Ohm/ N-Channel/ UltraFET Power MOSFET | Fairchild Semiconductor |
HUF75829D3S | 18A/ 150V/ 0.110 Ohm/ N-Channel/ UltraFET Power MOSFET | Intersil Corporation |
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