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HYB3165400AT-50 fiches techniques PDF

Siemens Semiconductor Group - 16M x 4-Bit Dynamic RAM

Numéro de référence HYB3165400AT-50
Description 16M x 4-Bit Dynamic RAM
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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HYB3165400AT-50 fiche technique
16M x 4-Bit Dynamic RAM
(4k & 8k Refresh)
HYB 3164400AJ/AT(L) -40/-50/-60
HYB 3165400AJ/AT(L) -40/-50/-60
Advanced Information
16 777 216 words by 4-bit organization
0 to 70 °C operating temperature
Fast Page Mode operation
Performance:
-40 -50 -60
tRAC RAS access time
40 50 60 ns
tCAC CAS access time
10 13 15 ns
tAA Access time from address 20 25 30 ns
tRC Read/write cycle time
75 90 110 ns
tPC Fast page mode cycle time 30 35 40 ns
Single + 3.3 V (± 0.3V) power supply
Low power dissipation:
max. 396 mW active ( HYB 3164400AJ/AT(L) -40)
max. 324 mW active ( HYB 3164400AJ/AT(L) -50)
max. 270 mW active ( HYB 3164400AJ/AT(L) -60)
max. 558 mW active ( HYB 3165400AJ/AT(L) -40)
max. 468 mW active ( HYB 3165400AJ/AT(L) -50)
max. 378 mW active ( HYB 3165400AJ/AT(L) -60)
7.2 mW standby (LVTTL)
3.24 mW standby (LVCMOS)
720 µW standby for L-versions
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh (L-version only)
8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164400AJ/AT)
4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165400AJ/AT)
256 msec refresh period for L-versions
Plastic Package
P-SOJ-32-1 400 mil
P-TSOPII-32-1 400 mil
HYB 3164(5)400AJ
HYB 3164(5)400AT
Semiconductor Group
1
6.97

PagesPages 26
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