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Numéro de référence | HYB3165165BT-60 | ||
Description | 4M x 16-Bit Dynamic RAM | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
4M x 16-Bit Dynamic RAM
(8k, 4k & 2k Refresh, EDO-version)
Preliminary Information
HYB 3164165BT(L) -40/-50/-60
HYB 3165165BT(L) -40/-50/-60
HYB 3166165BT(L) -40/-50/-60
• 4 194 304 words by 16-bit organization
• 0 to 70 °C operating temperature
• Hyper Page Mode - EDO - operation
• Performance:
-40 -50 -60
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
CAS access time
Access time from address
Read/write cycle time
Hyper page mode (EDO)
cycle time
40
10
20
69
16
50 60 ns
13 15 ns
25 30 ns
84 104 ns
20 25 ns
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
-40 -50 -60
HYB3166165BT(L)
864 702 558 mW
HYB3165165BT(L)
486 396 324 mW
HYB3164165BT(L)
306 252 216 mW
7.2 mW standby (TTL)
3.6 mW standby (MOS)
720 µA standby for L-version
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and Self Refresh (L-version only
• 2 CAS / 1 WE byte control
• 8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164165BT)
4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HYB 3165165BT)
2048 refresh cycles/ 32 ms , 11 R/ 11C addresses (HYB 3166165BT)
• 128 ms refresh period for L-versions
• Plastic Package: P-TSOPII-50 400 mil
Semiconductor Group
1
12.97
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Pages | Pages 29 | ||
Télécharger | [ HYB3165165BT-60 ] |
No | Description détaillée | Fabricant |
HYB3165165BT-60 | 4M x 16-Bit Dynamic RAM | Siemens Semiconductor Group |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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