|
|
Numéro de référence | HYB3165160ATL-50 | ||
Description | 4M x 16-Bit Dynamic RAM | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
4M x 16-Bit Dynamic RAM
( 8k, 4k & 2k Refresh)
Advanced Information
• 4 194 304 words by 16-bit organization
HYB 3164160AT(L) -40/-50/-60
HYB 3165160AT(L) -40/-50/-60
HYB 3166160AT(L) -40/-50/-60
• 0 to 70 °C operating temperature
• Fast Page Mode operation
• Performance:
-40 -50 -60
tRAC RAS access time
40 50 60 ns
tCAC CAS access time
10 13 15 ns
tAA Access time from address 20 25 30 ns
tRC Read/write cycle time
75 90 110 ns
tPC Fast page mode cycle time 30 35 40 ns
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
HYB3166160AT(L)
HYB3165160AT(L)
HYB3164160AT(L)
-40 -50 -60
900 558 396 mW
756 468 324 mW
612 378 270 mW
7.2 mW standby (TTL)
3.24 mW standby (MOS)
720 µW standby for L-version
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh (L-version only)
• 2 CAS / 1 WE byte control
• 8192 refresh cycles /128 ms , 13 R/ 9C addresses (HYB 3164160AT)
4096 refresh cycles / 64 ms , 12 R/ 10C addresses (HYB 3165160AT)
2048 refresh cycles / 32 ms , 11 R/ 11C addresses (HYB 3166160AT)
• 256 msec refresh period for L-versions
• Plastic Package: P-TSOPII-50 400 mil
Semiconductor Group
1
6.97
|
|||
Pages | Pages 26 | ||
Télécharger | [ HYB3165160ATL-50 ] |
No | Description détaillée | Fabricant |
HYB3165160ATL-50 | 4M x 16-Bit Dynamic RAM | Siemens Semiconductor Group |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |