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PDF HYB3164805BJ Data sheet ( Hoja de datos )

Número de pieza HYB3164805BJ
Descripción 8M x 8-Bit Dynamic RAM
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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No Preview Available ! HYB3164805BJ Hoja de datos, Descripción, Manual

8M x 8-Bit Dynamic RAM
(4k & 8k Refresh, EDO-version)
HYB 3164805BJ/BT(L) -40/-50/-60
HYB 3165805BJ/BT(L) -40/-50/-60
Premininary Information
8 388 608 words by 4-bit organization
0 to 70 °C operating temperature
Hyper Page Mode - EDO - operation
Performance:
-40 -50 -60
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
CAS access time
Access time from address
Read/write cycle time
Hyper page mode (EDO)
cycle time
40
10
20
69
16
50 60 ns
13 15 ns
25 30 ns
84 104 ns
20 25 ns
Single + 3.3 V (± 0.3V) power supply
Low power dissipation:
max. 306 active mW ( HYB 3164805BJ/BT(L)-40)
max. 252 active mW ( HYB 3164805BJ/BT(L)-50)
max. 216 active mW ( HYB 3164805BJ/BT(L)-60)
max. 486 active mW ( HYB 3165805BJ/BT(L)-40)
max. 396 active mW ( HYB 3165805BJ/BT(L)-50)
max. 324 active mW ( HYB 3165805BJ/BT(L)-60)
7.2 mW standby (LVTTL)
3.6 mW standby (LVMOS)
720 µA standby for L-version
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh
Self refresh (L-version only)
8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164805BJ/BT)
4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165805BJ/BT)
128 msec refresh period for L-versions
Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)400BJ
P-TSOPII-32-1 400 mil
HYB 3164(5)400BT(L)
Semiconductor Group
1
12.97

1 page




HYB3164805BJ pdf
HYB3164(5)805BJ/BT(L)-40/-50/-60
8M x 8-DRAM
I/O1 I/O2
I/O8
WE
.CAS
&
No. 2 Clock
Generator
Data in
Buffer
8
Data out
Buffer
8
OE
Column
10 Address
A0 Buffer(10)
A1
10 Column
Decoder
A2
A3 Refresh
A4 Controller
A5
Sense Amplifier
I/O Gating
8
A6
A7 Refresh
A8 Counter (13)
A9
A10 13
1024
x8
A11 Row
Row
Memory Array
A12
13 Address
Buffers(13)
13 Decoder 8192 8192 x 1024 x 8
RAS
No. 1 Clock
Generator
Block Diagram for HYB 3164805BJ/BT(L)
Semiconductor Group
5

5 Page





HYB3164805BJ arduino
HYB3164(5)805BJ/BT(L)-40/-50/-60
8M x 8-DRAM
AC Characteristics (cont’d) 5)6)
TA = 0 to 70 °C,VCC = 3.3 V ± 0.3V , tT = 2 ns
AC64-2E
Parameter
Symbol
- 40
Limit Values
- 50 - 60
Unit Note
min. max. min. max. min. max.
RAS pulse width in hyper page mode tRAS
CAS precharge to RAS Delay
tRHPC
OE pulse width
tOEP
OE hold time from CAS high
tOEHC
Output buffer turn-off delay from WE tWEZ
OE setup time prior to CAS
tOES
40 200k 50 200k 60 200k ns
22 – 27 – 32 – ns
5 – 5 – 5 – ns
5 – 5 – 5 – ns
0 10 0 13 0 15 ns
5 – 5 – 5 – ns
Hyper Page Mode (EDO) Read-
modify-Write Cycle
Hyper page mode (EDO) read-write tPRWC
cycle time
44 – 54 – 63 – ns
CAS precharge to WE
tCPWD 34 – 42 – 49 – ns
CAS before RAS Refresh Cycle
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write hold time referenced to RAS
tCSR
tCHR
tRPC
tWRP
tWRH
5 – 5 – 5 – ns
5 – 5 – 10 – ns
5 – 5 – 5 – ns
5 – 5 – 10 – ns
5 – 5 – 10 – ns
Self Refresh Cycle (L-versions only)
RAS pulse width
RAS precharge time
CAS hold time
tRASS
tRPS
tCHS
100k
100k _ 100k _
69 – 84 – 104 –
-50 – -50 – -50 –
ns 17
ns 17
ns 17
Test Mode Cycle
Write command setup time
Write command hold time
tWTS 5 – 5 – 5 – ns 18
tWTH 5 – 5 – 5 – ns 18
Semiconductor Group
11

11 Page







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