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Numéro de référence | HYB3164805AT-60 | ||
Description | 8M x 8-Bit Dynamic RAM | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
8M x 8-Bit Dynamic RAM
(4k & 8k Refresh, EDO-Version)
HYB 3164805AJ/AT(L) -40/-50/-60
HYB 3165805AJ/AT(L) -40/-50/-60
Advanced Information
• 8 388 608 words by 8-bit organization
• 0 to 70 °C operating temperature
• Hyper Page Mode - EDO - operation
• Performance:
-40 -50 -60
tRAC RAS access time
40 50 60 ns
tCAC CAS access time
10 13 15 ns
tAA Access time from address 20 25 30 ns
tRC Read/write cycle time
69 84 104 ns
tHPC Hyper page mode (EDO) 16 20 25 ns
cycle time
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
max. 450 active mW ( HYB 3164805AJ/AT(L)-40)
max. 360 active mW ( HYB 3164805AJ/AT(L)-50)
max. 324 active mW ( HYB 3164805AJ/AT(L)-60)
max. 612 active mW ( HYB 3165805AJ/AT(L)-40)
max. 468 active mW ( HYB 3165805AJ/AT(L)-50)
max. 432 active mW ( HYB 3165805AJ/AT(L)-60)
7.2 mW standby (LVTTL)
3.24 mW standby (LVMOS)
720 µA standby for L-version
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh
• Self refresh (L-version only)
• 8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164805AJ/AT)
4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165805AJ/AT)
• 256 msec refresh period for L-versions
• Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)805AJ
P-TSOPII-32-1 400 mil
HYB 3164(5)805AT(L)
Semiconductor Group
1
6.97
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Pages | Pages 29 | ||
Télécharger | [ HYB3164805AT-60 ] |
No | Description détaillée | Fabricant |
HYB3164805AT-60 | 8M x 8-Bit Dynamic RAM | Siemens Semiconductor Group |
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