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PDF HYB3164800T-60 Data sheet ( Hoja de datos )
| Número de pieza | HYB3164800T-60 | |
| Descripción | 8M x 8-Bit Dynamic RAM | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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8M x 8-Bit Dynamic RAM
(4k & 8k Refresh)
HYB 3164800J/T -50/-60
HYB 3165800J/T -50/-60
Preliminary Information
• 8 388 608 words by 8-bit organization
• 0 to 70 ˚C operating temperature
• Fast access and cycle time
RAS access time:
50 ns (-50 version)
60 ns (-60 version)
Cycle time:
90 ns (-50 version)
110 ns (-60 version)
CAS access time:
13 ns ( -50 version)
15 ns ( -60 version)
• Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation
max. 396 active mW ( HYB 3164800J/T-50)
max. 360 active mW ( HYB 3164800J/T-60)
max. 504 active mW ( HYB 3165800J/T-50)
max. 432 active mW ( HYB 3165800J/T-60)
7.2 mW standby (TTL)
720 W standby (MOS)
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh modes
• Fast page mode capability
• 8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164800J/T)
• 4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165800J/T)
• Plastic Package:
P-SOJ-34-1 500 mil HYB 3164(5)800J
P-TSOPII-34-1 500 mil HYB 3164(5)800T
Semiconductor Group
121
1 page  
HYB 3164(5)800J/T-50/-60
8M x 8-DRAM
Block Diagram for HYB 3165800J/T
Semiconductor Group
125
5 Page 
HYB 3164(5)800J/T-50/-60
8M x 8-DRAM
AC Characteristics (cont’d)(note: 6,7,8)
TA = 0 to 70 ˚C,VCC = 3.3 ± 0.3V
Parameter
Symbol
HYB
3164(5)800
J/T-50
min. max.
CAS precharge to RAS Delay
tRHCP
30
–
HYB
3164(5)800
J/T-60
min. max.
35 –
Unit Note
ns
Fast Page Mode Read-Modify-Write
Cycle
Fast page mode read-write cycle time
CAS precharge to WE
tPRWC
tCPWD
71
48
–
–
80 –
55 –
ns
ns
CAS-before-RAS refresh cycle
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write hold time referenced to RAS
tCSR
tCHR
tRPC
tWRP
tWRH
5–
10 –
5–
10 –
10 –
5–
10 –
5–
10 –
10 –
ns
ns
ns
ns
ns
CAS-before-RAS counter test cycle
CAS precharge time
tCPT
25 –
30 –
ns
Test mode cycle
Write command setup time
Write command hold time
tWTS
tWTH
10 –
10 –
10 –
10 –
ns
ns
Self Refresh Cycle
RAS pulse width
RAS precharge time
CAS hold time
tRASS
tRPS
tCHS
100k
90
-50
–
–
–
100k
110
-50
–
–
–
ns 17
17
ns 17
Semiconductor Group
131
11 Page | ||
| Páginas | Total 28 Páginas | |
| PDF Descargar | [ Datasheet HYB3164800T-60.PDF ] | |
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