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PDF HYB3164800AT-50 Data sheet ( Hoja de datos )
| Número de pieza | HYB3164800AT-50 | |
| Descripción | 8M x 8-Bit Dynamic RAM | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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8M x 8-Bit Dynamic RAM
( 4k & 8k Refresh)
HYB 3164800AJ/AT(L) -40/-50/-60
HYB 3165800AJ/AT(L) -40/-50/-60
Advanced Information
• 8 388 608 words by 8-bit organization
• 0 to 70 °C operating temperature
• Fast Page Mode operation
• Performance:
-40 -50 -60
tRAC RAS access time
40 50 60 ns
tCAC CAS access time
10 13 15 ns
tAA Access time from address 20 25 30 ns
tRC Read/write cycle time
75 90 110 ns
tPC Fast page mode cycle time 30 35 40 ns
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
max. 396 mW active ( HYB 3164800AJ/AT(L) -40)
max. 324 mW active ( HYB 3164800AJ/AT(L) -50)
max. 270 mW active ( HYB 3164800AJ/AT(L) -60)
max. 558 mW active ( HYB 3165800AJ/AT(L) -40)
max. 468 mW active ( HYB 3165800AJ/AT(L) -50)
max. 378 mW active ( HYB 3165800AJ/AT(L) -60)
7.2 mW standby (LVTTL)
3.24 mW standby (LVCMOS)
720 µW standby for L-versions
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh (L-version only)
• 8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164800AJ/AT)
4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165800AJ/AT)
• 256 msec refresh period for L-versions
• Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)800AJ
P-TSOPII-32-1 400 mil HYB 3164(5)800AT(L)
Semiconductor Group
1
6.97
1 page  
HYB3164(5)800AJ/AT(L)-40/-50/-60
8M x 8-DRAM
I/O1 I/O2
I/O8
WE
.CAS
&
No. 2 Clock
Generator
Data in
Buffer
8
Data out
Buffer
8
OE
Column
11 Address
A0 Buffer(11)
A1
11 Column
Decoder
A2
A3 Refresh
A4 Controller
A5
Sense Amplifier
I/O Gating
8
A6
A7 Refresh
A8 Counter (12)
A9
12
A10
2048
x8
A11 Row
Row
Memory Array
12 Address
Buffers(12)
12 Decoder 4096 4096 x 2048 x 8
RAS
No. 1 Clock
Generator
Block Diagram for HYB 3165800AJ/AT(L)
Semiconductor Group
5
5 Page 
HYB3164(5)800AJ/AT(L)-40/-50/-60
8M x 8-DRAM
AC Characteristics (cont’d)(note: 6,7,8)
TA = 0 to 70 °C,VCC = 3.3 ± 0.3V
AC64-2F
Parameter
Symbol
-40
-50
-60 Unit Note
min. max. min. max. min. max.
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle tPRWC 60 –
time
71 –
80 –
ns
CAS precharge to WE
tCPWD 40
–
48 –
55 –
ns
CAS-before-RAS Refresh Cycle
CAS setup time
tCSR 5 – 5 – 5 – ns
CAS hold time
tCHR 5 – 5 – 10 – ns
RAS to CAS precharge time
tRPC 0 – 0 – 0 – ns
Write to RAS precharge time
tWRP
5
–
5
–
10 –
ns
Write hold time referenced to RAS tWRH 5 – 5 – 10 – ns
Self Refresh Cycle (L-version only)
RAS pulse width
RAS precharge time
CAS hold time
tRASS
tRPS
tCHS
100k –
75 –
-50 –
100k –
90 –
-50 –
100k –
110 –
-50 –
ns 17
ns 17
ns 17
Test Mode Cycle
Write command setup time
Write command hold time
tWTS
tWTH
5
5
Capacitance
TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Input capacitance (A0 to A11,A12)
Input capacitance (RAS, CAS, WE, OE)
I/O capacitance (I/O1-I/O8)
–5–5–
–5–5–
Symbol
CI1
CI2
CIO
Limit Values
min.
max.
–5
–7
–7
ns 18
ns 18
Unit
pF
pF
pF
Semiconductor Group
11
11 Page | ||
| Páginas | Total 26 Páginas | |
| PDF Descargar | [ Datasheet HYB3164800AT-50.PDF ] | |
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