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Numéro de référence | HYB3164800AT-40 | ||
Description | 8M x 8-Bit Dynamic RAM | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
8M x 8-Bit Dynamic RAM
( 4k & 8k Refresh)
HYB 3164800AJ/AT(L) -40/-50/-60
HYB 3165800AJ/AT(L) -40/-50/-60
Advanced Information
• 8 388 608 words by 8-bit organization
• 0 to 70 °C operating temperature
• Fast Page Mode operation
• Performance:
-40 -50 -60
tRAC RAS access time
40 50 60 ns
tCAC CAS access time
10 13 15 ns
tAA Access time from address 20 25 30 ns
tRC Read/write cycle time
75 90 110 ns
tPC Fast page mode cycle time 30 35 40 ns
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
max. 396 mW active ( HYB 3164800AJ/AT(L) -40)
max. 324 mW active ( HYB 3164800AJ/AT(L) -50)
max. 270 mW active ( HYB 3164800AJ/AT(L) -60)
max. 558 mW active ( HYB 3165800AJ/AT(L) -40)
max. 468 mW active ( HYB 3165800AJ/AT(L) -50)
max. 378 mW active ( HYB 3165800AJ/AT(L) -60)
7.2 mW standby (LVTTL)
3.24 mW standby (LVCMOS)
720 µW standby for L-versions
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh (L-version only)
• 8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164800AJ/AT)
4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165800AJ/AT)
• 256 msec refresh period for L-versions
• Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)800AJ
P-TSOPII-32-1 400 mil HYB 3164(5)800AT(L)
Semiconductor Group
1
6.97
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Pages | Pages 26 | ||
Télécharger | [ HYB3164800AT-40 ] |
No | Description détaillée | Fabricant |
HYB3164800AT-40 | 8M x 8-Bit Dynamic RAM | Siemens Semiconductor Group |
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