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HYB3164405BT-50 fiches techniques PDF

Siemens Semiconductor Group - 16M x 4-Bit Dynamic RAM

Numéro de référence HYB3164405BT-50
Description 16M x 4-Bit Dynamic RAM
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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HYB3164405BT-50 fiche technique
16M x 4-Bit Dynamic RAM
(4k & 8k Refresh, EDO-version)
HYB 3164405BJ/BT(L) -40/-50/-60
HYB 3165405BJ/BT(L) -40/-50/-60
Preliminary Information
16 777 216 words by 4-bit organization
0 to 70 °C operating temperature
Hyper Page Mode - EDO - operation
Performance:
-40 -50 -60
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
CAS access time
Access time from address
Read/write cycle time
Hyper page mode (EDO)
cycle time
40
10
20
69
16
50 60 ns
13 15 ns
25 30 ns
84 104 ns
20 25 ns
Single + 3.3 V (± 0.3V) power supply
Low power dissipation:
max. 306 active mW ( HYB 3164405BJ/BT(L)-40)
max. 252 active mW ( HYB 3164405BJ/BT(L)-50)
max. 216 active mW ( HYB 3164405BJ/BT(L)-60)
max. 486 active mW ( HYB 3165405BJ/BT(L)-40)
max. 396 active mW ( HYB 3165405BJ/BT(L)-50)
max. 324 active mW ( HYB 3165405BJ/BT(L)-60)
7.2 mW standby (LVTTL)
3.6 mW standby (LVMOS)
720 µA standby for L-version
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh
Self refresh (L-version only)
8192 refresh cycles/128 ms, 13 R/ 11C addresses (HYB 3164405BJ/BT)
4096 refresh cycles / 64 ms, 12 R/ 12C addresses (HYB 3165405BJ/BT)
128 msec refresh period for L-versions
Plastic Package:
P-SOJ-32-1 400 mil HYB 3164(5)400BJ
P-TSOPII-32-1 400 mil HYB 3164(5)400BT(L)
Semiconductor Group
1
12.97

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