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Numéro de référence | HYB3164405BT-40 | ||
Description | 16M x 4-Bit Dynamic RAM | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
16M x 4-Bit Dynamic RAM
(4k & 8k Refresh, EDO-version)
HYB 3164405BJ/BT(L) -40/-50/-60
HYB 3165405BJ/BT(L) -40/-50/-60
Preliminary Information
• 16 777 216 words by 4-bit organization
• 0 to 70 °C operating temperature
• Hyper Page Mode - EDO - operation
• Performance:
-40 -50 -60
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
CAS access time
Access time from address
Read/write cycle time
Hyper page mode (EDO)
cycle time
40
10
20
69
16
50 60 ns
13 15 ns
25 30 ns
84 104 ns
20 25 ns
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
max. 306 active mW ( HYB 3164405BJ/BT(L)-40)
max. 252 active mW ( HYB 3164405BJ/BT(L)-50)
max. 216 active mW ( HYB 3164405BJ/BT(L)-60)
max. 486 active mW ( HYB 3165405BJ/BT(L)-40)
max. 396 active mW ( HYB 3165405BJ/BT(L)-50)
max. 324 active mW ( HYB 3165405BJ/BT(L)-60)
7.2 mW standby (LVTTL)
3.6 mW standby (LVMOS)
720 µA standby for L-version
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh
• Self refresh (L-version only)
• 8192 refresh cycles/128 ms, 13 R/ 11C addresses (HYB 3164405BJ/BT)
4096 refresh cycles / 64 ms, 12 R/ 12C addresses (HYB 3165405BJ/BT)
• 128 msec refresh period for L-versions
• Plastic Package:
P-SOJ-32-1 400 mil HYB 3164(5)400BJ
P-TSOPII-32-1 400 mil HYB 3164(5)400BT(L)
Semiconductor Group
1
12.97
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Pages | Pages 29 | ||
Télécharger | [ HYB3164405BT-40 ] |
No | Description détaillée | Fabricant |
HYB3164405BT-40 | 16M x 4-Bit Dynamic RAM | Siemens Semiconductor Group |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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