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HYB3164400T-60 fiches techniques PDF

Siemens Semiconductor Group - 16M x 4-Bit Dynamic RAM

Numéro de référence HYB3164400T-60
Description 16M x 4-Bit Dynamic RAM
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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HYB3164400T-60 fiche technique
16M x 4-Bit Dynamic RAM
(4k & 8k Refresh)
HYB 3164400J/T -50/-60
HYB 3165400J/T -50/-60
Preliminary Information
16 777 216 words by 4-bit organization
0 to 70 ˚C operating temperature
Fast access and cycle time
RAS access time:
50 ns (-50 version)
60 ns (-60 version)
Cycle time:
90 ns (-50 version)
110 ns (-60 version)
CAS access time:
13 ns ( -50 version)
15 ns ( -60 version)
Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
Single + 3.3 V (± 0.3V) power supply
Low power dissipation
max. 396 active mW ( HYB 3164400J/T-50)
max. 360 active mW ( HYB 3164400J/T-60)
max. 504 active mW ( HYB 3165400J/T-50)
max. 432 active mW ( HYB 3165400J/T-60)
7.2 mW standby (TTL)
720 W standby (MOS)
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh modes
Fast page mode capability
8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164400J/T)
4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165400J/T)
Plastic Package:
P-SOJ-34-1 500 mil HYB 3164(5)400J
P-TSOPII-34-1 500 mil HYB 3164(5)400T
Semiconductor Group
61

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