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PDF HYB3164165T Data sheet ( Hoja de datos )
| Número de pieza | HYB3164165T | |
| Descripción | 4M x 16-Bit Dynamic RAM | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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4M x 16-Bit Dynamic RAM
(4k & 8k Refresh, EDO-version)
HYB 3164165T(L) -50/-60
HYB 3165165T(L) -50/-60
Preliminary Information
• 4 194 304 words by 16-bit organization
• 0 to 70 ˚C operating temperature
• Fast access and cycle time
RAS access time:
50 ns (-50 version)
60 ns (-60 version)
Cycle time:
84 ns (-50 version)
104 ns (-60 version)
CAS access time:
13 ns ( -50 version)
15 ns ( -60 version)
• Hyper page mode (EDO) cycle time
20 ns (-50 version)
25 ns (-60 version)
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation
max. 396 active mW ( HYB 3164165T(L)-50)
max. 360 active mW ( HYB 3164165T(L)-60)
max. 504 active mW ( HYB 3165165T(L)-50)
max. 432 active mW ( HYB 3165165T(L)-60)
7.2 mW standby (TTL)
720 W standby (MOS)
14.4 mW Self Refresh (L-version only)
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh modes
• Hyper page mode (EDO) capability
• 2 CAS / 1 WE byte control
• 8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164165T(L))
• 4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HYB 3165165T(L))
• Plastic Package:
P-TSOPII-54-1 500 mil HYB 3164(5)165T(L)
Semiconductor Group
31
1 page  
HYB3164(5)165T(L)-50/-60
4M x 16 EDO-DRAM
Block Diagram for HYB 3164165T(L)
Semiconductor Group
35
5 Page 
HYB3164(5)165T(L)-50/-60
4M x 16 EDO-DRAM
AC Characteristics (cont’d) 5)6)
TA = 0 to 70 ˚C,VCC = 3.3 V ± 0.3V , tT = 2 ns
Parameter
Symbol
Limit Values
-50 -60
min. max. min. max.
OE pulse width
tOEP
7
–
10 –
OE hold time from CAS high
tOEHC 7 – 10 –
WE pulse width to output disable at CAS tWPZ 7 – 10 –
high
Output buffer turn-off delay from WE tWPZ 0
10 0
10
Unit Note
ns
ns
ns
ns
Hyper Page Mode (EDO) Read-
modify-Write Cycle
Hyper page mode (EDO) read-write
cycle time
CAS precharge to WE
tPRWC
51
tCPWD 41
–
–
66 –
49 –
ns
ns
CAS before RAS refresh cycle
CAS setup time
tCSR
5
–
5
–
CAS hold time
tCHR
8
–
10 –
RAS to CAS precharge time
tRPC
5
–
5
–
Write to RAS precharge time
tWRP
8
–
10 –
Write hold time referenced to RAS
tWRH
8
–
10 –
ns
ns
ns
ns
ns
CAS-before-RAS counter test cycle
CAS precharge time (CAS-before-RAS tCPT 35 –
counter test cycle)
40 –
ns
Self Refresh Cycle
RAS pulse width during self refresh
RAS precharge time during self refresh
CAS hold time during self refresh
tRASS
tRPS
tCHS
100k
84
-50
_
_
_
100k
104
-50
_
_
_
ns 17
ns 17
ns 17
Semiconductor Group
41
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet HYB3164165T.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HYB3164165AT | 4M x 16-Bit Dynamic RAM | Siemens Semiconductor Group |
| HYB3164165AT-40 | 4M x 16-Bit Dynamic RAM | Siemens Semiconductor Group |
| HYB3164165AT-50 | 4M x 16-Bit Dynamic RAM | Siemens Semiconductor Group |
| HYB3164165AT-60 | 4M x 16-Bit Dynamic RAM | Siemens Semiconductor Group |
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