DataSheetWiki


HYB3164165BTL-60 fiches techniques PDF

Siemens Semiconductor Group - 4M x 16-Bit Dynamic RAM

Numéro de référence HYB3164165BTL-60
Description 4M x 16-Bit Dynamic RAM
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





1 Page

No Preview Available !





HYB3164165BTL-60 fiche technique
4M x 16-Bit Dynamic RAM
(8k, 4k & 2k Refresh, EDO-version)
Preliminary Information
HYB 3164165BT(L) -40/-50/-60
HYB 3165165BT(L) -40/-50/-60
HYB 3166165BT(L) -40/-50/-60
4 194 304 words by 16-bit organization
0 to 70 °C operating temperature
Hyper Page Mode - EDO - operation
Performance:
-40 -50 -60
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
CAS access time
Access time from address
Read/write cycle time
Hyper page mode (EDO)
cycle time
40
10
20
69
16
50 60 ns
13 15 ns
25 30 ns
84 104 ns
20 25 ns
Single + 3.3 V (± 0.3V) power supply
Low power dissipation:
-40 -50 -60
HYB3166165BT(L)
864 702 558 mW
HYB3165165BT(L)
486 396 324 mW
HYB3164165BT(L)
306 252 216 mW
7.2 mW standby (TTL)
3.6 mW standby (MOS)
720 µA standby for L-version
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and Self Refresh (L-version only
2 CAS / 1 WE byte control
8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164165BT)
4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HYB 3165165BT)
2048 refresh cycles/ 32 ms , 11 R/ 11C addresses (HYB 3166165BT)
128 ms refresh period for L-versions
Plastic Package: P-TSOPII-50 400 mil
Semiconductor Group
1
12.97

PagesPages 29
Télécharger [ HYB3164165BTL-60 ]


Fiche technique recommandé

No Description détaillée Fabricant
HYB3164165BTL-60 4M x 16-Bit Dynamic RAM Siemens Semiconductor Group
Siemens Semiconductor Group

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche