DataSheetWiki


HYB3164160ATL-60 fiches techniques PDF

Siemens Semiconductor Group - 4M x 16-Bit Dynamic RAM

Numéro de référence HYB3164160ATL-60
Description 4M x 16-Bit Dynamic RAM
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





1 Page

No Preview Available !





HYB3164160ATL-60 fiche technique
4M x 16-Bit Dynamic RAM
( 8k, 4k & 2k Refresh)
Advanced Information
4 194 304 words by 16-bit organization
HYB 3164160AT(L) -40/-50/-60
HYB 3165160AT(L) -40/-50/-60
HYB 3166160AT(L) -40/-50/-60
0 to 70 °C operating temperature
Fast Page Mode operation
Performance:
-40 -50 -60
tRAC RAS access time
40 50 60 ns
tCAC CAS access time
10 13 15 ns
tAA Access time from address 20 25 30 ns
tRC Read/write cycle time
75 90 110 ns
tPC Fast page mode cycle time 30 35 40 ns
Single + 3.3 V (± 0.3V) power supply
Low power dissipation:
HYB3166160AT(L)
HYB3165160AT(L)
HYB3164160AT(L)
-40 -50 -60
900 558 396 mW
756 468 324 mW
612 378 270 mW
7.2 mW standby (TTL)
3.24 mW standby (MOS)
720 µW standby for L-version
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh (L-version only)
2 CAS / 1 WE byte control
8192 refresh cycles /128 ms , 13 R/ 9C addresses (HYB 3164160AT)
4096 refresh cycles / 64 ms , 12 R/ 10C addresses (HYB 3165160AT)
2048 refresh cycles / 32 ms , 11 R/ 11C addresses (HYB 3166160AT)
256 msec refresh period for L-versions
Plastic Package: P-TSOPII-50 400 mil
Semiconductor Group
1
6.97

PagesPages 26
Télécharger [ HYB3164160ATL-60 ]


Fiche technique recommandé

No Description détaillée Fabricant
HYB3164160ATL-60 4M x 16-Bit Dynamic RAM Siemens Semiconductor Group
Siemens Semiconductor Group

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche