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Número de pieza | HYB3164160ATL-50 | |
Descripción | 4M x 16-Bit Dynamic RAM | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HYB3164160ATL-50 (archivo pdf) en la parte inferior de esta página. Total 26 Páginas | ||
No Preview Available ! 4M x 16-Bit Dynamic RAM
( 8k, 4k & 2k Refresh)
Advanced Information
• 4 194 304 words by 16-bit organization
HYB 3164160AT(L) -40/-50/-60
HYB 3165160AT(L) -40/-50/-60
HYB 3166160AT(L) -40/-50/-60
• 0 to 70 °C operating temperature
• Fast Page Mode operation
• Performance:
-40 -50 -60
tRAC RAS access time
40 50 60 ns
tCAC CAS access time
10 13 15 ns
tAA Access time from address 20 25 30 ns
tRC Read/write cycle time
75 90 110 ns
tPC Fast page mode cycle time 30 35 40 ns
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
HYB3166160AT(L)
HYB3165160AT(L)
HYB3164160AT(L)
-40 -50 -60
900 558 396 mW
756 468 324 mW
612 378 270 mW
7.2 mW standby (TTL)
3.24 mW standby (MOS)
720 µW standby for L-version
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh (L-version only)
• 2 CAS / 1 WE byte control
• 8192 refresh cycles /128 ms , 13 R/ 9C addresses (HYB 3164160AT)
4096 refresh cycles / 64 ms , 12 R/ 10C addresses (HYB 3165160AT)
2048 refresh cycles / 32 ms , 11 R/ 11C addresses (HYB 3166160AT)
• 256 msec refresh period for L-versions
• Plastic Package: P-TSOPII-50 400 mil
Semiconductor Group
1
6.97
1 page HYB3164(5/6)160AT(L)-40/-50/-60
4M x 16-DRAM
I/O1 I/O2
I/O16
WE
.UCAS
.LCAS
&
No. 2 Clock
Generator
Data in
Buffer
16
Data out
Buffer
16
OE
Column
9 Address
A0 Buffer(9)
A1
9 Column
Decoder
A2
A3 Refresh
A4 Controller
A5
Sense Amplifier
I/O Gating
16
A6
A7 Refresh
A8 Counter (13)
A9
A10 13
512
x16
A11 Row
Row
Memory Array
A12
13 Address
Buffers(13)
13 Decoder 8192 8192x512x16
RAS
No. 1 Clock
Generator
Block Diagram for HYB 3164160AT(L)
Semiconductor Group
5
5 Page HYB3164(5/6)160AT(L)-40/-50/-60
4M x 16-DRAM
AC Characteristics (cont’d)(note: 6,7,8)
TA = 0 to 70 °C,VCC = 3.3 ± 0.3V
AC64-2F
Parameter
Symbol
-40
-50
-60 Unit Note
min. max. min. max. min. max.
CAS to output in low-Z
tCLZ 0 – 0 – 0 – ns 8
Output buffer turn-off delay
tOFF – 10 – 13 – 15 ns 12
Output buffer turn-off delay from tOEZ – 10 – 13 – 15 ns 12
OE
Data to OE low delay
CAS high to data delay
OE high to data delay
tDZO
tCDD
tODD
0–
10 –
10 –
0–
13 –
13 –
0–
15 –
15 –
ns 13
ns 14
ns 14
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
CAS delay time from Din
tWCH
tWP
tWCS
tR WL
tC WL
tDS
tDH
tDZC
5–
5–
0–
10 –
10 –
0–
5–
0–
7–
7–
0–
13 –
13 –
0–
7–
0–
10 –
10 –
0–
15 –
15 –
0–
10 –
0–
ns
ns
ns 15
ns
ns
ns 16
ns 16
ns 13
Read-Modify-Write Cycle
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE command hold time
tR WC
tR WD
tC WD
tA WD
tOEH
105 –
55 –
25 –
35 –
5–
126 –
68 –
31 –
43 –
7–
150 –
80 –
35 –
50 –
10 –
ns
ns 15
ns 15
ns 15
ns
Fast Page Mode Cycle
Fast page mode cycle time
Access time from CAS precharge
RAS pulse width
CAS precharge to RAS Delay
tPC
tCPA
tRAS
tRHPC
30
–
40
25
– 35
25 –
200k 50
– 30
– 40
30 –
200k 60
– 35
– ns
35 ns
200k ns
– ns
8
Semiconductor Group
11
11 Page |
Páginas | Total 26 Páginas | |
PDF Descargar | [ Datasheet HYB3164160ATL-50.PDF ] |
Número de pieza | Descripción | Fabricantes |
HYB3164160ATL-50 | 4M x 16-Bit Dynamic RAM | Siemens Semiconductor Group |
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