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HYB314405BJL-70 fiches techniques PDF

Siemens Semiconductor Group - 1M x 4-Bit Dynamic RAM

Numéro de référence HYB314405BJL-70
Description 1M x 4-Bit Dynamic RAM
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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HYB314405BJL-70 fiche technique
1M x 4-Bit Dynamic RAM
(Hyper Page Mode (EDO) version)
HYB 314405BJ/BJL-50/-60/-70
Advanced Information
1 048 576 words by 4-bit organization
0 to 70 ˚C operating temperature
Hyper Page Mode - EDO
Performance:
tRAC RAS access time
tCAC CAS access time
tAA Access time from address
tRC Read/Write cycle time
tHPC Hyper page mode (EDO)
cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
89 104 124 ns
20 25 30 ns
Single + 3.3 V (± 0.3 V) supply
Low power dissipation
max. 252 mW active (-50 version)
max. 216 mW active (-60 version)
max. 198 mW active (-70 version)
Standby power dissipation:
7.2 mW max. standby (LVTTL)
3.6 mW max. standby (LVCMOS)
720 µW max. standby (LVCMOS) for Low Power Version
Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
All inputs and outputs LVTTL compatible
1024 refresh cycles / 16 ms
1024 refresh cycles / 128 ms for Low Power Version
Plastic Packages: P-SOJ-26/20-5 with 300 mil width
Semiconductor Group
1
4.96

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