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Numéro de référence | HYB314405BJL-70 | ||
Description | 1M x 4-Bit Dynamic RAM | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
1M x 4-Bit Dynamic RAM
(Hyper Page Mode (EDO) version)
HYB 314405BJ/BJL-50/-60/-70
Advanced Information
• 1 048 576 words by 4-bit organization
• 0 to 70 ˚C operating temperature
• Hyper Page Mode - EDO
• Performance:
tRAC RAS access time
tCAC CAS access time
tAA Access time from address
tRC Read/Write cycle time
tHPC Hyper page mode (EDO)
cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
89 104 124 ns
20 25 30 ns
• Single + 3.3 V (± 0.3 V) supply
• Low power dissipation
max. 252 mW active (-50 version)
max. 216 mW active (-60 version)
max. 198 mW active (-70 version)
• Standby power dissipation:
7.2 mW max. standby (LVTTL)
3.6 mW max. standby (LVCMOS)
720 µW max. standby (LVCMOS) for Low Power Version
• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
• All inputs and outputs LVTTL compatible
• 1024 refresh cycles / 16 ms
• 1024 refresh cycles / 128 ms for Low Power Version
• Plastic Packages: P-SOJ-26/20-5 with 300 mil width
Semiconductor Group
1
4.96
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Pages | Pages 25 | ||
Télécharger | [ HYB314405BJL-70 ] |
No | Description détaillée | Fabricant |
HYB314405BJL-70 | 1M x 4-Bit Dynamic RAM | Siemens Semiconductor Group |
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