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PDF HYB314400BJ-50- Data sheet ( Hoja de datos )
| Número de pieza | HYB314400BJ-50- | |
| Descripción | 1M x 4-Bit Dynamic RAM | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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1M × 4-Bit Dynamic RAM
HYB 314400BJ-50/-60
Advanced Information
• 1 048 576 words by 4-bit organization
• 0 to 70 °C operating temperature
• Fast Page Mode Operation
• Performance:
-50
tRAC RAS access time
50
tCAC CAS access time
13
tAA Access time from address 25
tRC Read/Write cycle time
95
tPC Fast page mode cycle time 35
-60
60 ns
15 ns
30 ns
110 ns
40 ns
• Fast access and cycle time
Single + 3.3 V (± 0.3 V) supply with a built-in VBB generator
• Low power dissipation
max. 252 mW active (-50 version)
max. 216 mW active (-60 version)
• Standby power dissipation:
7.2 mW max. standby (LVTTL)
3.6 mW max. standby (LVCMOS)
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
• All inputs and outputs LVTTL-compatible
• 1024 refresh cycles / 16 ms
• Plastic Packages: P-SOJ-26/20-2 with 300 mil width
Semiconductor Group
1
1998-10-01
1 page  
HYB 314400BJ-50/-60
3.3 V 1M × 4 DRAM
Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70 °C
Storage temperature range.................................................................................... – 55 to + 150 °C
Input/output voltage ............................................................................ – 1 to min (VCC + 0.5, 4.6) V
Power Supply voltage ................................................................................................. – 1 to + 4.6 V
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, tT = 5 ns
Parameter
Symbol
Limit Values
min.
max.
Unit Test
Condition
Input high voltage
Input low voltage
TTL Output high voltage (IOUT = – 2 mA)
TTL Output low voltage (IOUT = 2 mA)
CMOS Output high voltage (IOUT = – 100 µA)
CMOS Output low voltage (IOUT = 100 µA)
Input leakage current, any input
(0 V < VIN < VCC + 0.3 V, all other input = 0 V)
Output leakage current
(DO is disabled, 0 < VOUT < VCC)
Average VCC supply current
-50 version
-60 version
VIH
VIL
VOH
VOL
VOH
VOL
II(L)
IO(L)
ICC1
2.0
– 1.0
VCC + 0.5 V
0.8 V
2.4 –
V
– 0.4 V
VCC – 0.2 –
– 0.2
V
V
– 10 10
µA
1
1
1
1
1
– 10 10
µA 1
mA 2, 3, 4
– 70
– 60
Standby VCC supply current
(RAS = CAS = WE = VIH)
Average VCC supply current during RAS-only
refresh cycles
-50 version
-60 version
ICC2
ICC3
–
–
–
2 mA
mA 2, 4
70
60
Average VCC supply current during fast page ICC4
mode operation
-50 version
-60 version
–
–
mA 2, 3, 4
50
45
Semiconductor Group
5
1998-10-01
5 Page 
HYB 314400BJ-50/-60
3.3 V 1M × 4 DRAM
VIH
RAS
VIL
VIH
CAS
VIL
Address
VIH
VIL
VIH
WE
VIL
VIH
OE
VIL
I/O
(Inputs)
VIH
VIL
I/O VOH
(Outputs) VOL
t RAS
t RC
t RP
t RCD
t CSH
t RSH
t CAS
t ASR
t RAD
t ASC
t RAL
t CAH
Row Column
t RAH
t RCS
t AA
t OEA
t CRP
t ASR
t RCH
t RRH
Row
t DZC
t DZO
t CAC
t CLZ
Hi Z
t RAC
"H" or "L"
t CDD
t ODD
t OFF
t OEZ
Valid Data OUT
Hi Z
SPT03025
Read Cycle
Semiconductor Group
11
1998-10-01
11 Page | ||
| Páginas | Total 25 Páginas | |
| PDF Descargar | [ Datasheet HYB314400BJ-50-.PDF ] | |
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