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HYB314265BJ-50 fiches techniques PDF

Siemens Semiconductor Group - 256K x 16-Bit EDO-Dynamic RAM

Numéro de référence HYB314265BJ-50
Description 256K x 16-Bit EDO-Dynamic RAM
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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HYB314265BJ-50 fiche technique
256K x 16-Bit EDO-Dynamic RAM
HYB 514265BJ-400/40/-45/-50
HYB 314265BJ(L)-45/-50
Preliminary Information
262 144 words by 16-bit organization
Power Supply:
0 to 70 °C operating temperature
EDO - Hyper Page Mode
Performance:
-400 -40 -45 -50
trc 69 69 79 89 ns
trac 40 40 45 50 ns
tcac 10 10 12 13 ns
taa 20 20 22 25 ns
thpc 12,5 15 18 20 ns
thpc 80 66 55 50 MHz
Low Power dissipation
- Active(max.):
120mA / 120mA / 105mA / 95 mA
- Standby : TTL Inputs (max.) 2.0 mA
- Standby: CMOS Inputs (max.) 1.0 mA
- Standby (L-version)
200 µA
HYB 514265BJ-400 +5 V ±5%
HYB 514265BJ-40 +5 V ±10%
HYB 514265BJ-45 +5 V ±10%
HYB 514265BJ-50 +5 V ±10%
HYB 314265BJ(L)-45 +3.3 V ±0.3 V
HYB 314265BJ(L)-50 +3.3 V ±0.3 V
Read, write, read-modify-write, CAS -before
RAS refresh, RAS only refresh, hidden refresh
mode
Low Power Version (L) with Self Refresh
and 250 µA self refresh current
2 CAS / 1 WE control
All inputs and outputs TTL-compatible
512 refresh cycles / 16 ms
512 refresh cycles / 128 ms (L-version)
Plastic Packages: P-SOJ-40-3 400 mil width
The HYB 5(3)14265BJ(L) is the new generation dynamic RAM organized as 262 144 words by
16-bit. The HYB 5(3)14265BJ(L) utilizes the SIEMENS 16M-CMOS submicron silicon gate process
as well as advanced circuit techniques to provide wide operation margins, both internally and for the
system user. Multiplexed address inputs permit the HYB 5(3)14265BJ(L) to be packed in a
standard plastic 400mil wide P-SOJ-40-3 package. This package size provides high system bit
densities and is compatible with commonly used automatic testing and insertion equipment.
The HYB314265BJL parts have a very low power “sleep mode“ supported by Self Refresh.
Semiconductor Group
1
6.96

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