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PDF HYB314100BJ-70 Data sheet ( Hoja de datos )
| Número de pieza | HYB314100BJ-70 | |
| Descripción | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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4M x 1-Bit Dynamic RAM
Low Power 4M x 1-Bit Dynamic RAM
HYB 314100BJ/BJL -50/-60/-70
Advanced Information
• 4 194 304 words by 1-bit organization
• 0 to 70 ˚C operating temperature
• Fast Page Mode Operation
• Performance:
tRAC RAS access time
tCAC CAS access time
tAA Access time from address
tRC Read/Write cycle time
tPC Fast page mode cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
95 110 130 ns
35 40 45 ns
• Single + 3.3 V (± 0.3 V ) supply with a built-in Vbb generator
• Low power dissipation
max. 252 mW active (-50 version)
max. 216 mW active (-60 version)
max. 198 mW active (-70 version)
• Standby power dissipation:
7.2 mW max. standby (TTL)
3.6 mW max. standby (CMOS)
720 µW max. standby (CMOS) for Low Power Version
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
• All inputs and outputs TTL-compatible
• 1024 refresh cycles / 16 ms
• 1024 refresh cycles / 128 ms Low Power Version
• Plastic Packages: P-SOJ-26/20-5 with 300 mil width
Semiconductor Group
1
4.96
1 page  
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 ˚C
Storage temperature range......................................................................................– 55 to + 150 ˚C
Input/output voltage ........................................................................... – 1 to + min (VCC + 0.5, 4.6) V
Power Supply voltage .................................................................................................. – 1 to + 4.6 V
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3.3 V ± 0.3 V , tT = 5 ns
Parameter
Symbol Limit Values
min.
max.
Unit Test
Condition
Input high voltage
Input low voltage
TTL Output high voltage (IOUT = – 2 mA)
TTL Output low voltage (IOUT = 2 mA)
VIH
2.0
VCC + 0.5 V
1)
VIL – 1.0 0.8 V 1)
VOH 2.4
–
V 1)
VOL –
0.4 V 1)
CMOS Output high voltage (IOUT = – 100 µA) VOH
VCC – 0.2 –
V
CMOS Output low voltage (IOUT = 100 µA)
Input leakage current, any input
(0 V < Vin < VCC + 0.3 V, all other input = 0 V)
Output leakage current
(DO is disabled, 0 V < VOUT < VCC)
Average VCC supply current
-50 version
-60 version
-70 version
VOL
II(L)
IO(L)
ICC1
–
– 10
– 10
_
–
–
0.2
10
10
70
60
55
V
µA 1)
µA 1)
mA 2) 3)4)
Standby VCC supply current
(RAS = CAS = WE = VIH)
Average VCC supply current during RAS-only
refresh cycles
-50 version
-60 version
-70 version
Average VCC supply current during fast page
mode operation
-50 version
-60 version
-70 version
Standby VCC supply current
(RAS = CAS = WE = VCC – 0.2 V)
ICC2
ICC3
ICC4
ICC5
–
_
–
–
–
–
–
2 mA –
mA 2)4)
70
60
55
mA 2) 3)4)
50
45
40
1 mA 1)
200 µA L-version
Semiconductor Group
5
5 Page 
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
Read Cycle
Semiconductor Group
11
11 Page | ||
| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet HYB314100BJ-70.PDF ] | |
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