DataSheetWiki


HYB314100BJ-60 fiches techniques PDF

Siemens Semiconductor Group - 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM

Numéro de référence HYB314100BJ-60
Description 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





1 Page

No Preview Available !





HYB314100BJ-60 fiche technique
4M x 1-Bit Dynamic RAM
Low Power 4M x 1-Bit Dynamic RAM
HYB 314100BJ/BJL -50/-60/-70
Advanced Information
4 194 304 words by 1-bit organization
0 to 70 ˚C operating temperature
Fast Page Mode Operation
Performance:
tRAC RAS access time
tCAC CAS access time
tAA Access time from address
tRC Read/Write cycle time
tPC Fast page mode cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
95 110 130 ns
35 40 45 ns
Single + 3.3 V (± 0.3 V ) supply with a built-in Vbb generator
Low power dissipation
max. 252 mW active (-50 version)
max. 216 mW active (-60 version)
max. 198 mW active (-70 version)
Standby power dissipation:
7.2 mW max. standby (TTL)
3.6 mW max. standby (CMOS)
720 µW max. standby (CMOS) for Low Power Version
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
All inputs and outputs TTL-compatible
1024 refresh cycles / 16 ms
1024 refresh cycles / 128 ms Low Power Version
Plastic Packages: P-SOJ-26/20-5 with 300 mil width
Semiconductor Group
1
4.96

PagesPages 23
Télécharger [ HYB314100BJ-60 ]


Fiche technique recommandé

No Description détaillée Fabricant
HYB314100BJ-60 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM Siemens Semiconductor Group
Siemens Semiconductor Group

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche