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PDF HYB3118165BST-60 Data sheet ( Hoja de datos )
| Número de pieza | HYB3118165BST-60 | |
| Descripción | 1M x 16-Bit Dynamic RAM 1k Refresh | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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1M × 16-Bit Dynamic RAM
1k Refresh
(Hyper Page Mode-EDO)
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
Advanced Information
• 1 048 576 words by 16-bit organization
• 0 to 70 °C operating temperature
• Hyper Page Mode-EDO-operation
• Performance:
tRAC RAS access time
tCAC CAS access time
tAA Access time from address
tRC Read/Write cycle time
tHPC Hyper page mode (EDO) cycle time
-50 -60
50 60 ns
13 15 ns
25 30 ns
84 104 ns
20 25 ns
• Power Dissipation, Refresh & Addressing:
Power Supply
Addressing
Refresh
Active
TTL Standby
CMOS Standby
HYB5118165 HYB3118165
-50 -60 -50 -60
5 V ± 10 %
3.3 V ± 0.3 V
10/10
10/10
1024 cycles / 16 ms
715 632 468 414
11 7.2
5.5 3.6
mW
mW
mW
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh
• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
• Plastic Package: P-SOJ-42-1
400 mil
P-TSOPII-50/44-1 400 mil
Semiconductor Group
1
1998-10-01
1 page  
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
1M × 16 EDO-DRAM
Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70 °C
Storage temperature range........................................................................................ – 55 to 150 °C
Input/output voltage (5 V versions) .................................................... – 0.5 to min (VCC + 0.5, 7.0) V
Input/output voltage (3.3 V versions) ................................................. – 0.5 to min (VCC + 0.5, 4.6) V
Power supply voltage (5 V versions) ....................................................................... – 1.0 V to 7.0 V
Power supply voltage (3.3 V versions) .................................................................... – 1.0 V to 4.6 V
Power dissipation (5 V versions) ............................................................................................. 1.0 W
Power dissipation (3.3 V versions) .......................................................................................... 0.5 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C, VSS = 0 V, tT = 2 ns
Parameter
5 V Versions
Power supply voltage
Input high voltage
Input low voltage
Output high voltage (IOUT = – 5 mA)
Output low voltage (IOUT = 4.2 mA)
3.3 V Versions
Power supply voltage
Input high voltage
Input low voltage
TTL Output high voltage (IOUT = – 2 mA)
TTL Output low voltage (IOUT = 2 mA)
CMOS Output high voltage (IOUT = – 100 µA)
CMOS Output low voltage (IOUT = 100 µA)
Symbol Limit Values
min.
max.
Unit Test
Condition
VCC 4.5 5.5 V
VIH 2.4
VCC + 0.5 V
1
VIL – 0.5 0.8 V 1
VOH 2.4
–
V1
VOL –
0.4 V 1
VCC 3.0 3.6 V
VIH 2.0
VCC + 0.5 V
1
VIL – 0.5 0.8 V 1
VOH 2.4
–
V1
VOL –
0.4 V 1
VOH VCC – 0.2 –
V
VOL –
0.2 V
Semiconductor Group
5
1998-10-01
5 Page 
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
1M × 16 EDO-DRAM
VIH
RAS
VIL
UCAS
LCAS
VIH
VIL
Address
VIH
VIL
VIH
WE
VIL
VIH
OE
VIL
I/O
(Inputs)
VIH
VIL
I/O VOH
(Outputs) VOL
t RAS
t RC
t RP
t RCD
t CSH
t RSH
t CAS
t ASR
t RAD
t ASC
t RAL
t CAH
Row Column
t RAH
t RCS
t AA
t OEA
t CRP
t ASR
t RCH
t RRH
Row
t DZC
t DZO
t CAC
t CLZ
Hi Z
t RAC
"H" or "L"
t CDD
t ODD
t OFF
t OEZ
Valid Data OUT
Hi Z
SPT03043
Read Cycle
Semiconductor Group
11
1998-10-01
11 Page | ||
| Páginas | Total 24 Páginas | |
| PDF Descargar | [ Datasheet HYB3118165BST-60.PDF ] | |
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