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HYB3118160BST-70 fiches techniques PDF

Siemens Semiconductor Group - 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh

Numéro de référence HYB3118160BST-70
Description 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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HYB3118160BST-70 fiche technique
1M x 16-Bit Dynamic RAM
(1k & 4k -Refresh)
HYB3116160BSJ/BST(L)-50/-60/-70
HYB3118160BSJ/BST(L)-50/-60/-70
Advanced Information
1 048 576 words by 16-bit organization
0 to 70 °C operating temperature
Performance:
tRAC
tCAC
tAA
tRC
tPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
90 110 130 ns
35 40 45 ns
Single + 3.3 V (± 0.3 V) supply
Low power dissipation
max. 720 active mW ( HYB3118160BSJ/BST-50)
max. 648 active mW ( HYB3118160BSJ/BST-60)
max. 576 active mW ( HYB3118160BSJ/BST-70)
max. 360 active mW ( HYB3116160BSJ/BST-50)
max. 324 active mW ( HYB3116160BSJ/BST-60)
max. 288 active mW ( HYB3116160BSJ/BST-70)
7.2 mW standby (LV-TTL)
3.6 mW standby (LV-CMOS)
720 µW standby for L-version
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh
Fast page mode capability
2 CAS / 1 WE
All inputs, outputs and clocks fully LV-TTL-compatible
1024 refresh cycles / 16 ms for HYB 3118160BSJ
4096 refresh cycles / 64 ms for HYB 3116160BSJ
Plastic Package:
P-SOJ-42-1 400 mil
P-TSOPII-50/44-1 400mil
Semiconductor Group
1
1.96

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