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PDF HYB3117800BSJ-60 Data sheet ( Hoja de datos )
| Número de pieza | HYB3117800BSJ-60 | |
| Descripción | 2M x 8-Bit Dynamic RAM | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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2M x 8-Bit Dynamic RAM
HYB3117800BSJ-50/-60/-70
Advanced Information
• 2 097 152 words by 8-bit organization
• 0 to 70 °C operating temperature
• Performance:
tRAC
tCAC
tAA
tRC
tPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
90 110 130 ns
35 40 45 ns
• Single + 3.3 V (± 0.3V) supply
• Low power dissipation
max. 432 active mW (-50 version)
max. 396 active mW (-60 version)
max. 360 active mW (-70 version)
7.2 mW standby (LV-TTL)
3.6 mW standby (CMOS)
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh and test mode
• Fast page mode capability
• All inputs, outputs and clocks fully LVTTL-compatible
• 2048 refresh cycles / 32 ms
• Plastic Package:
P-SOJ-28-3 400 mil
Semiconductor Group
1
1.96
1 page  
HYB 3117800BSJ-50/-60/-70
2M x 8-DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage ...............................................................................-0.5 to min (Vcc+0.5, 4.6) V
Power supply voltage...................................................................................................-1.0V to 4.6 V
Power dissipation..................................................................................................................... 0.5 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics
TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3V, tT = 5 ns
Parameter
Symbol
Limit Values
min.
max.
Input high voltage
VIH
Input low voltage
VIL
LVTTL Output high voltage (IOUT = –2 mA)
VOH
LVTTL Output low voltage (IOUT = 2 mA)
VOL
CMOS Output high voltage (IOUT = –100 µA) VOH
CMOS Output low voltage (IOUT = 100 µA)
VOL
Input leakage current,any input
(0 V ≤ VIH ≤ Vcc + 0.3V, all other pins = 0 V)
II(L)
Output leakage current
(DO is disabled, 0 V ≤ VOUT ≤ Vcc + 0.3V)
IO(L)
Average VCC supply current:
-50 ns version
ICC1
-60 ns version
-70 ns version
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current (RAS = CAS = VIH) ICC2
Average VCC supply current, during RAS-only ICC3
refresh cycles:
-50 ns version
-60 ns version
-70 ns version
(RAS cycling: CAS = VIH, tRC = tRC min.)
2.0
– 0.5
2.4
–
Vcc-0.2
–
– 10
Vcc+0.5
0.8
–
0.4
–
0.2
10
– 10 10
– 120
– 110
– 100
–2
– 120
– 110
– 100
Unit Test
Condition
V 1)
V 1)
V 1)
V 1)
V
V)
µA 1)
µA 1)
mA 2) 3) 4)
mA 2) 3) 4)
mA 2) 3) 4)
mA –
mA 2) 4)
mA 2) 4)
mA 2) 4)
Semiconductor Group
5
5 Page 
HYB 3117800BSJ-50/-60/-70
2M x 8-DRAM
RAS
V
IH
VIL
CAS
V
IH
VIL
V
IH
Address
VIL
V
IH
WE
VIL
V
IH
OE
VIL
V
I/O IH
(Inputs) VIL
V
I/O OH
(Outputs) VOL
tRC
tRAS
tRP
tCSH
tRCD
tRSH
tCAS
tASR
tRAD
tASC
tCAH
tRAL
Row
Column
tRAH
tRCS
tAA
tOEA
tCRP
tASR
tRCH
tRRH
Row
tDZC
tDZO
tCAC
tCLZ
Hi Z
tRAC
tODD
tCDD
tOEZ
tOFF
Valid Data Out
Hi Z
“H” or “L”
WL1
Read Cycle
Semiconductor Group
11
11 Page | ||
| Páginas | Total 26 Páginas | |
| PDF Descargar | [ Datasheet HYB3117800BSJ-60.PDF ] | |
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