HYB3116400BJ-50 Datasheet PDF - Siemens Semiconductor Group
| Part Number | HYB3116400BJ-50 | |
| Description | 4M x 4-Bit Dynamic RAM 2k & 4k Refresh | |
| Manufacturers | Siemens Semiconductor Group | |
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There is a preview and HYB3116400BJ-50 download ( pdf file ) link at the bottom of this page. Total 26 Pages | ||
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3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BJ/BT(L) -50/-60/-70
HYB3117400BJ/BT(L) -50/-60/-70
Advanced Information
• 4 194 304 words by 4-bit organization
• 0 to 70 °C operating temperature
• Performance:
tRAC
tCAC
tAA
tRC
tPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
90 110 130 ns
35 40 45 ns
• Single + 3.3 V (± 0.3V ) supply
• Low power dissipation
max. 396 active mW (HYB3117400BJ/BT-50)
max. 363 active mW (HYB3117400BJ/BT-60)
max. 330 active mW (HYB3117400BJ/BT-70)
max. 360 active mW (HYB3116400BJ/BT-50)
max. 324 active mW (HYB3116400BJ/BT-60)
max. 288 active mW (HYB3116400BJ/BT-70)
7.2 mW standby (LV-TTL)
3.6 mW standby (LV-CMOS)
720 µW standby for L-version
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
Self Refresh and test mode
• Fast page mode capability
• All inputs, outputs and clocks fully TTL-compatible
• 2048 refresh cycles / 32 ms for HYB3117400
4096 refresh cycles / 64 ms for HYB3116400
• Plastic Package:
P-SOJ-26/24-1 (300 mil)
P-TSOPII-26/24-1 (300mil)
Semiconductor Group
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1.96
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HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
I/O1 I/O2 I/O3 I/O4
WE
.CAS
&
No. 2 Clock
Generator
Data in
Buffer
4
Data out
Buffer
4
OE
Column
10 Address
A0 Buffer(10)
A1
10 Column
Decoder
A2
A3 Refresh
A4 Controller
A5
Sense Amplifier
I/O Gating
4
A6
A7 Refresh
A8 Counter (12)
A9
A10 12
1024
x4
A11 Row
Row
Memory Array
12 Address
Buffers(12)
12 Decoder 4096 4096x1024x4
RAS
No. 1 Clock
Generator
Block Diagram for HYB3116400
Semiconductor Group
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HYB3116400BJ-50 electronic component. |
| Information | Total 26 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ HYB3116400BJ-50.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| HYB3116400BJ-50 | The function is 3.3V 4M x 4-Bit Dynamic RAM. Siemens Semiconductor Group | |
| HYB3116400BJ-50 | The function is 4M x 4-Bit Dynamic RAM 2k & 4k Refresh. Siemens Semiconductor Group | |
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