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Datasheet 99227-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
992 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 99227 | PolarHV Power MOSFET Advanced Technical Information
PolarHVTM Power MOSFET
Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated
IXTC 26N50P
VDSS = 500 V = 13 A ID25 RDS(on) = 260 mΩ
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight
Test Conditions TJ = 25°C  IXYS Corporation mosfet | | |
| 2 | 9926A | Dual N-Channel MOSFET Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
MOSFET
Dual N-Channel MOSFET 9926A
Features
6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V.
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current  Tuofeng Semiconductor mosfet | | |
| 3 | 9926A | FDW9926A www.datasheet4u.com
FDW9926A
March 2005
FDW9926A
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applicati  Fairchild Semiconductor data | | |
| 4 | 9926B | Dual N-Channel MOSFET Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
MOSFET
Dual N-Channel MOSFET
9926B
Features
6.5A, 20 V. rDS(on) = 0.022 @ VGS = 4.5 V 5.5A, 20 V rDS(on) = 0.035 @ VGS = 2.5 V.
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Curre Tuofeng Semiconductor mosfet | |
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