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What is ABR3508?

This electronic component, produced by the manufacturer "EIC discrete Semiconductors", performs the same function as "AVALANCHE BRIDGE RECTIFIERS".


ABR3508 Datasheet PDF - EIC discrete Semiconductors

Part Number ABR3508
Description AVALANCHE BRIDGE RECTIFIERS
Manufacturers EIC discrete Semiconductors 
Logo EIC discrete Semiconductors Logo 


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No Preview Available ! ABR3508 datasheet, circuit

ABR3500 - ABR3510
PRV : 50 - 1000 Volts
Io : 35 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* ldeal for printed circuit board
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
AVALANCHE BRIDGE
RECTIFIERS
BR50
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.310(7.87)
0.280(7.11)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL ABR
3500
Maximum Recurrent Peak Reverse Voltage
VRRM
50
Maximum RMS Voltage
VRMS
35
Maximum DC Blocking Voltage
VDC 50
Minimum Avalanche Breakdown Voltage at 100 µA
VBO(min.) 100
Maximum Avalanche Breakdown Voltage at 100 µA
VBO(max.) 550
Maximum Average Forward Current Tc = 50°C
IF(AV)
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing at ( t < 8.3 ms. )
IFSM
I2t
Maximum Forward Voltage per Diode at IF = 17.5 Amps. VF
Maximum DC Reverse Current
Ta = 25 °C
IR
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
Typical Thermal Resistance (Note 1)
RθJC
Operating Junction Temperature Range
TJ
Storage Temperature Range
TSTG
ABR
3501
100
70
100
150
600
ABR
3502
200
140
200
250
700
ABR
3504
400
280
400
450
900
35
ABR
3506
600
420
600
700
1150
400
660
1.1
10
200
1.5
- 40 to + 150
- 40 to + 150
ABR
3508
800
560
800
900
1350
ABR
3510
1000
UNIT
Volts
700 Volts
1000 Volts
1100 Volts
1550 Volts
Amps.
Amps.
A2S
Volts
µA
µA
°C/W
°C
°C
Notes : 1 ) Thermal resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" ( 19 x 9 x 11.8 cm )Al. plate.
UPDATE : APRIL 21, 1998


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for ABR3508 electronic component.


Information Total 2 Pages
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