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PDF AAT3215 Data sheet ( Hoja de datos )
| Número de pieza | AAT3215 | |
| Descripción | 150mA CMOS High Performance LDO | |
| Fabricantes | Advanced Analogic Technologies | |
| Logotipo |  |
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AAT3215
150mA CMOS High Performance LDO
General Description
The AAT3215 MicroPower™ Low Dropout Linear
Regulator is ideally suited for portable applications
where low noise, extended battery life and small
size are critical. The AAT3215 has been specifi-
cally designed for very low output noise perform-
ance, fast transient response and high power sup-
ply rejection ratio (PSRR), making it ideal for pow-
ering sensitive RF circuits.
Other features include low quiescent current, typi-
cally 95µA, and low dropout voltage which is typi-
cally less than 140mV at full output current. The
device is output short circuit protected and has a
thermal shutdown circuit for additional protection
under extreme conditions.
The AAT3215 also features a low-power shutdown
mode for extended battery life. A reference bypass
pin has been provided to improve PSRR perform-
ance and output noise, by connecting an external
capacitor from the AAT3215's reference output to
ground.
The AAT3215 is available in a space saving 5-pin
SOT-23 or 8-pin SC70-JW package in 8 factory
programmed voltages of 2.5V, 2.7V, 2.8V, 2.85V,
2.9V, 3.0V, 3.3V, or 3.5V.
Features
PowerLinear™
• Low Dropout - 140mV at 150mA
• Guaranteed 150mA Output
• High accuracy ±1.5%
• 95µA Quiescent Current
• High Power Supply Ripple Rejection
• 70 dB at 1kHz
• 50 dB at 10kHz
• Very low self noise 45µVrms/rtHz
• Fast line and load transient response
• Short circuit protection
• Over-Temperature protection
• Uses Low ESR ceramic capacitors
• Noise reduction bypass capacitor
• Shutdown mode for longer battery life
• Low temperature coefficient
• 8 Factory programmed output voltages
• SOT-23 5-pin or SC70-JW 8-pin package
Applications
• Cellular Phones
• Notebook Computers
• Portable Communication Devices
• Personal Portable Electronics
• Digital Cameras
Typical Application
VIN
IN OUT
AAT3215
VOUT
ON/OFF EN
BYP
GND
1µF
10nF
2.2µF
GND
GND
3215.2002.03.0.91
1
1 page  
AAT3215
150mA CMOS High Performance LDO
Typical Characteristics
(Unless otherwise noted, VIN = 5V, TA = 25°C)
On/Off Transient Response
No CBYP Capacitor
On/Off Transient Response
CBYP=10nF
EN (2V/div)
VOUT (1V/div)
10mA
150mA
100µs/div
10mA
EN (2V/div)
VOUT (1V/div)
150mA
5ms/div
Line Transient Response
3.04
6
3.03
5
3.02
4
3.01
3
3.00
2
2.99
1
2.98
0
5µs/div
Load Transient Response
3.10
3.05
3.00
2.95
2.90
2.85
2.80
100 µs/div
500
400
300
200
100
0
-100
Short Circuit Current
1.2
1
0.8
0.6
0.4
0.2
0
10ms/div
3215.2002.03.0.91
Power Supply Rejection Ratio vs.
Frequency
90
80
IOUT=150mA
4.7µf
70
60
COUT=10µf
2.2µf
50
40
30
20 1.0µf
10
0
10 100 1k 10k 100k 1m 10m
Frequency (Hz)
5
5 Page 
AAT3215
150mA CMOS High Performance LDO
Applications Information
VOUT = 2.5 volts
IOUT = 150mA
IGND = 150uA
VIN(MAX)=(211mW+(2.5Vx150mA))/(150mA +150uA)
VIN(MAX) = 3.90V
Higher input to output voltage differentials can be
obtained with the AAT3215, while maintaining
device functions within the thermal safe operating
area. To accomplish this, the device thermal
resistance must be reduced by increasing the heat
sink area or by operating the LDO regulator in a
duty cycled mode.
For example, an application requires VIN = 4.2V
while VOUT = 2.5V at a 150mA load and TA = 85°C.
VIN is greater than 3.90V, which is the maximum
safe continuous input level for VOUT = 2.5V at
150mA for TA = 85°C. To maintain this high input
voltage and output current level, the LDO regulator
must be operated in a duty cycled mode. Refer to
the following calculation for duty cycle operation:
PD(MAX) is assumed to be 211mW
IGND = 150µA
IOUT = 150mA
VIN = 4.2 volts
VOUT = 2.5 volt
%DC=100(PD(MAX)/((VIN-VOUT)IOUT+(VINxIGND))
%DC=100(211mW/((4.2V-2.5V)150mA+(4.2Vx150µA))
%DC = 85.54%
For a 150mA output current and a 2.7volt drop
across the AAT3215 at an ambient temperature of
85°C, the maximum on time duty cycle for the
device would be 85.54%.
The following family of curves show the safe oper-
ating area for duty cycled operation from ambient
room temperature to the maximum operating level.
Device Duty Cycle vs. VDROP
VOUT = 2.5V @ 25 C
3.5
3
2.5
2
1.5
1
0.5
0
0
200mA
10 20 30 40 50 60 70 80 90 100
Duty Cycle (%)
Device Duty Cycle vs. VDROP
VOUT= 2.5V @ 50 C
3.5
3
2.5
2
1.5
1
0.5
0
0
200mA
150mA
10 20 30 40 50 60 70 80 90 100
Duty Cycle (%)
Device Duty Cycle vs. VDROP
VOUT = 2.5V @ 85 C
3.5
3
2.5
2
1.5
1
0.5
0
0
200mA
150mA
100mA
10 20 30 40 50 60 70 80 90 100
Duty Cycle (%)
3215.2002.03.0.91
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet AAT3215.PDF ] | |
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