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PDF AA028P1-00 Data sheet ( Hoja de datos )
| Número de pieza | AA028P1-00 | |
| Descripción | 27-29 GHz GaAs MMIC Power Amplifier | |
| Fabricantes | Alpha Industries | |
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27–29 GHz GaAs MMIC
Power Amplifier
Features
I Single Bias Supply Operation (6 V)
I 22 dBm Typical P1 dB Output Power
at 28 GHz
I 13.5 dB Typical Small Signal Gain
I 0.25 µm Ti/Pd/Au Gates
I 100% On-Wafer RF and DC Testing
I 100% Visual Inspection to MIL-STD-883
MT 2010
Description
Alpha’s two-stage balanced Ka band GaAs MMIC
power amplifier has a typical P1 dB of 22 dBm with
12.5 dB associated gain and 10% power added efficiency
at 28 GHz. The chip uses Alpha’s proven 0.25 µm
MESFET technology, and is based upon MBE layers and
electron beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for S-parameters and power characteristics prior
to shipment for guaranteed performance. A broad range
of applications exist in both the commercial and high
reliability areas where high power and gain are required.
Chip Outline
1.700
1.613
1.371
AA028P1-00
0.086
0.000
0.329
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature (TC)
Storage Temperature (TST)
Bias Voltage (VD)
Power In (PIN)
Junction Temperature (TJ)
Value
-55°C to +90°C
-65°C to +150°C
7 VDC
22 dBm
175°C
Electrical Specifications at 25°C (VDS = 6 V)
Parameter
Condition
Drain Current (at Saturation)
Small Signal Gain
F = 27–29 GHz
Input Return Loss
F = 27–29 GHz
Output Return Loss
F = 27–29 GHz
Output Power at 1 dB Gain Compression
F = 28 GHz
Saturated Output Power
F = 28 GHz
Gain at Saturation
Thermal Resistance1
F = 28 GHz
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
Symbol
IDS
G
RLI
RLO
P1 dB
PSAT
GSAT
ΘJC
Min.
11
21
22
Typ.2
300
13.5
-13
-16
22
23
11
51
Max.
400
-10
-10
Unit
mA
dB
dB
dB
dBm
dBm
dB
°C/W
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 12/99A
1
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