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PDF ACT-SF41632N-37P1I Data sheet ( Hoja de datos )
| Número de pieza | ACT-SF41632N-37P1I | |
| Descripción | ACT-SF41632 High Speed 128Kx32 SRAM / 512Kx32 Flash Multichip Module | |
| Fabricantes | Aeroflex Circuit Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ACT-SF41632N-37P1I (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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ACT-SF41632 High Speed
128Kx32 SRAM / 512Kx32 Flash
Multichip Module
CIRCUIT TECHNOLOGY
FEATURES
www.aeroflex.com
s 4 – 128K x 8 SRAMs & 4 – 512K x 8 Flash Die in
One MCM
s Access Times of 25ns, 35ns (SRAM) and
60ns, 70ns, 90ns (Flash)
s Organized as 128K x 32 of SRAM and 512K x 32
of Flash Memory with Common Data Bus
FLASH MEMORY FEATURES
s Sector Architecture (Each Die)
q 8 Equal Sectors of 64K bytes each
q Any combination of sectors can be erased with
one command sequence.
s +5V Programing, +5V Supply
s Low Power CMOS
s Embedded Erase and Program Algorithms
s Input and Output TTL Compatible Design
s Hardware and Software Write Protection
s MIL-PRF-38534 Compliant MCMs Available
s Page Program Operation and Internal Program
s Decoupling Capacitors and Multiple Grounds for Control Time.
Low Noise
s 10,000 Erase/Program Cycles
s Commercial, Industrial and Military Temperature
Ranges
s Industry Standard Pinouts
s TTL Compatible Inputs and Outputs
s Packaging – Hermetic Ceramic
q 66–Lead, PGA-Type, 1.385"SQ x 0.245"max,
Aeroflex code# "P1,P5 with/without shoulders)"
q 68–Lead, Dual-Cavity CQFP(F2), 0.88"SQ x
.20"max (.18 max thickness available, contact
factory for details) (Drops into the 68 Lead
JEDEC .99"SQ CQFJ footprint)
FLEX LA
ISO
9001
CE R T I F I E D
Block Diagram – PGA Type Package(P1 & P5) & CQFP(F2)
OE
A0–A18
SCE
FCE
FWE1 SWE1
FWE2 SWE2
FWE3 SWE3
FWE4 SWE4
512K X 8 FLASH
www.DataSheet4U.co12m8K X 8 SRAM
512K X 8 FLASH
128K X 8 SRAM
512K X 8 FLASH
128K X 8 SRAM
512K X 8 FLASH
128K X 8 SRAM
I/O0-7
I/O8-15
I/O16-23
I/O24-31
PIN DESCRIPTION
I/O0-31
Data I/O
A0–18
Address Inputs
FWE1-4 Flash Write Enables
SWE1-4 SRAM Write Enables
FCE Flash Chip Enable
SCE SRAM Chip Enable
OE Output Enable
NC Not Connected
VCC Power Supply
GND
Ground
eroflex Circuit Technology - Advanced Multichip Modules © SCD3851 REV A 5/21/98
1 page  
Parameter
Flash AC Characteristics – Read Only Operations
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Symbol
–60 –70 –90
Units
JEDEC Stand’d Min Max Min Max Min Max
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable to Output Valid
Chip Enable to Output High Z (1)
Output Enable High to Output High Z(1)
Output Hold from Address, CE or OE Change, Whichever is First
Note 1. Guaranteed by design, but not tested
tAVAV
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX
tRC 60 70 90
ns
tACC 60 70 90 ns
tCE 60 70 90 ns
tOE 30 35 35 ns
tDF 20 20 20 ns
tDF 20 20 20 ns
tOH 0 0 0
ns
Flash AC Characteristics – Write / Erase / Program Operations, FWE Controlled
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Parameter
Symbol
–60 –70 –90
Units
JEDEC Stand’d Min Max Min Max Min Max
Write Cycle Time
tAVAC
tWC 60
70
90
ns
Chip Enable Setup Time
tELWL
tCE 0
0
0
ns
Write Enable Pulse Width
tWLWH
tWP 40
45
45
ns
Address Setup Time
tAVWL
tAS 0
0
0
ns
Data Setup Time
tDVWH
tDS 40
45
45
ns
Data Hold Time
tWHDX
tDH 0
0
0
ns
Address Hold Time
tWLAX
tAH 45
45
45
ns
Write Enable Pulse Width High
tWHWL
tWPH
20
20
20
ns
Duration of Byte Programming Operation
tWHWH1
14 TYP 14 TYP 14 TYP
µs
Sector Erase Time
Read Recovery Time before Write
tWHWH2
tGHWL
30 30 30
000
Sec
µs
Vcc Setup Time
tVCE 50 50 50 µs
Chip Programming Time
Chip Enable Hold Time
50 50 50
tOEH 1
10
10
10
Sec
ns
Chip Erase Time
tWHWH3
120 120 120 Sec
1. Toggle and Data Polling only.
Flash AC Characteristics – Write / Erase / Program Operations, FCE Controlled
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Parameter
Symbol
–60 –70 –90
Units
JEDEC Stand’d Min Max Min Max Min Max
Write Cycle Time
tAVAC
tWC 60
70
90
ns
Write Enable Setup Time
tWLEL
tWS 0
0
0
ns
Chip Enable Pulse Width
tELEH
tCP 40
45
45
ns
Address Setup Time
tAVEL
tAS 0
0
0
ns
Data Setup Time
tDVEH
tDS 40
45
45
ns
Data Hold Time
www.DAdadtareSshseHeto4ldUT.cimome
tEHDX
tDH 0
0
0
tELAX
tAH 45
45
45
ns
ns
Chip Enable Pulse Width High
tEHEL
tCPH
20
20
20
ns
Duration of Byte Programming
tWHWH1
14 TYP 14 TYP 14 TYP µs
Sector Erase Time
Read Recovery Time
tWHWH2
tGHEL
30 30 30
000
Sec
ns
Chip Programming Time
50 50 50 Sec
Chip Erase Time
tWHWH3
120 120 120 Sec
Aeroflex Circuit Technology
5 SCD3851 REV A 5/21/98 Plainview NY (516) 694-6700
5 Page 
CIRCUIT TECHNOLOGY
Ordering Information
Model Number
DESC Part Number
Speed
ACT-SF41632N–26P1X
TBD
25(S) / 60(F) ns
ACT-SF41632N–37P1X
TBD
35(S) / 70(F) ns
ACT-SF41632N–39P1X
TBD
35(S) / 90(F) ns
ACT-SF41632N–26F2X
TBD
25(S) / 60(F) ns
ACT-SF41632N–37F2X
TBD
35(S) / 70(F) ns
ACT-SF41632N–39F2X
Note: (S) = Speed for SRAM, (F) = Speed for FLASH
TBD
35(S) / 90(F) ns
Package
1.385"sq PGA-Type
1.385"sq PGA-Type
1.385"sq PGA-Type
.88"sq CQFP
.88"sq CQFP
.88"sq CQFP
Part Number Breakdown
ACT– SF
Aeroflex Circuit
Technology
Memory Type
SF = SRAM Flash Combo Module
Memory Depth, Locations
4 = 4M SRAM, 16 = 16M Flash
Memory Width, Bits
Pinout Options
N = None
Memory Speed (Code)
26 = 25ns SRAM & 60ns FLASH
37 = 35ns SRAM & 70ns FLASH
39 = 35ns SRAM & 90ns FLASH
416
32 N– 26 P1 M
Screening
C = Commercial Temp, 0°C to +70°C
I = Industrial Temp, -40°C to +85°C
T = Military Temp, -55°C to +125°C
M = Military Temp, -55°C to +125°C Screened *
Q = MIL-PRF-38534 Compliant/SMD
Package Types & Sizes
Surface Mount Packages
F2 = 0.88"SQ 68 Leads Dual-Cavity CQFP
Thru-Hole Packages
P1 = 1.385"SQ PGA 66 Pins W/Shoulder
P5 = 1.385"SQ PGA 66 Pins WO/Shoulder
* Screened to the individual test methods of MIL-STD-883
www.DataSheet4U.com
Specifications subject to change without notice.
Aeroflex Circuit Technology
35 South Service Road
Plainview New York 11830
Aeroflex Circuit Technology
Telephone: (516) 694-6700
FAX:
(516) 694-6715
Toll Free Inquiries: 1-(800) 843-1553
11 SCD3851 REV A 5/21/98 Plainview NY (516) 694-6700
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet ACT-SF41632N-37P1I.PDF ] | |
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