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ACT-F2M32C-120F18Q fiches techniques PDF

Aeroflex Circuit Technology - ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module

Numéro de référence ACT-F2M32C-120F18Q
Description ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module
Fabricant Aeroflex Circuit Technology 
Logo Aeroflex Circuit Technology 





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ACT-F2M32C-120F18Q fiche technique
ACT–F2M32A High Speed 64 Megabit
Sector Erase
FLASH Multichip Module
Features
CIRCUIT TECHNOLOGY
www.aeroflex.com/act1.htm
s 4 Low Voltage/Power AMD 2M x 8 FLASH Die in One
MCM Package
s Overall Configuration is 2M x 32
s +5V Power Supply / +5V Programing Operation
s Access Times of 90, 120 and 150 ns
s Erase/Program Cycles – 100,000 Minimum
s Sector erase architecture (Each Die)
q 32 uniform sectors of 64 Kbytes each
q Any combination of sectors can be erased. Also
supports full chip erase
q Sector group protection is user definable
s Embedded Erase Algorithims – Automatically
pre-programs and erases the die or any sector
s Embedded Program Algorithims – Automatically
programs and verifies data at specified address
s Ready/Busy output (RY/BY) – Hardware method for
detection of program or erase cycle completion
s Hardware RESET pin – Resets internal state machine
to the read mode
s Erase Suspend/Resume – Supports reading or
programming data to a sector not being erased
s Packaging – Hermetic Ceramic
q 68 Lead, .94" x .94" x .140" Single-Cavity Small
Outline Gull Wing, Aeroflex code# "F18" (Drops into
the 68 Lead JEDEC .99"SQ CQFJ footprint)
s Internal Decoupling Capacitors for Low Noise
Operation
s Commercial, Industrial and Military Temperature
Ranges
s MIL-PRF-38534 Compliant MCMs Available
Block Diagram – CQFP(F18)
Standard Configuration
CE1 CE2 CE3
RESET
WE
OE
A0 A20
RY/BY
2Mx8
2Mx8
2Mx8
8
I/O0-7
8
I/O8-15
8
I/O16-23
Pin Description
I/O0-31
Data I/O
CE4 A0–20 Address Inputs
WE Write Enables
CE1-4 Chip Enables
OE Output Enable
RY/BY Ready/Busy
2Mx8
RESET
Reset
VCC Power Supply
8 GND
I/O24-31 NC
Ground
Not Connected
Block Diagram – CQFP(F18)
Optional Configuration
Pin Description
RESET
OE
A0 A20
WE1
CE1 WE2 CE2 WE3
CE3 WE4 CE4 I/O0-31
A0–20
WE1-4
CE1-4
Data I/O
Address Inputs
Write Enable
Chip Enables
2Mx8
2Mx8
2Mx8
2Mx8
OE Output Enable
RESET
Reset
VCC Power Supply
8 88 8
GND
Ground
I/O0-7
I/O8-15 I/O16-23 I/O24-31 NC Not Connected
General Description
Utilizing AMD’s Sector Erase
Flash Memory Die, the
ACT-F2M32A is a high speed,
64 megabit CMOS flash
multichip module (MCM)
designed for full temperature
range, military, space, or high
reliability applications.
The ACT-F2M32A consists of
four high-performance AMD
Am29F016 16Mbit (16,777,216
bit) memory die. Each die
contains 8 separately write or
erase sector groups of
256Kbytes (A sector group
consists of 4 adjacent sectors of
64Kbytes each).
The command register is
written by bringing WE to a logic
low level (VIL), while CE is low
and OE is high (VIH). Reading is
accomplished by chip Enable
(CE) and Output Enable (OE)
being logically active. Access
time grades of 90ns, 120ns and
150ns maximum are standard.
eroflex Circuit Technology - Advanced Multichip Modules © SCD1666A REV A 9/12/97

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