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PDF ACT-F1M32B-100F14C Data sheet ( Hoja de datos )
| Número de pieza | ACT-F1M32B-100F14C | |
| Descripción | ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module | |
| Fabricantes | Aeroflex Circuit Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ACT-F1M32B-100F14C (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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ACT–F1M32 High Speed 32 Megabit
Boot Block
FLASH Multichip Module
Features
CIRCUIT TECHNOLOGY
www.aeroflex.com/act1.htm
s 4 Low Voltage/Power Intel 1M x 8 FLASH Die in One s Single Block Erase (All bits set to 1)
MCM Package
s Hardware Data Protection Feature
s Overall Configuration is 1M x 32
s Independent Boot Block Locking
s +5V Operation (Standard) or +3.3V (Consult Factory) s MIL-PRF-38534 Compliant MCMs Available
s Access Times of 80, 100 and 120 nS ( 5V VCC)
s Packaging – Hermetic Ceramic
s +5V or +12V Programing
q 68 Lead, .94" x .94" x .180" Dual-Cavity Small
s Erase/Program Cycles
q 100,000 Commercial
q 10,000 Military and Industrial
s Sector Architecture (Each Die)
Outline Gull Wing, Aeroflex code# "F14" (Drops into
the 68 Lead JEDEC .99"SQ CQFJ footprint)
s Internal Decoupling Capacitors for Low Noise
Operation
q One 16K Protected Boot Block (Bottom Boot Block s Commercial, Industrial and Military Temperature
Standard, Top Boot Block Special Order)
Ranges
q Two 8K Parameter Blocks
q One 96K Main Block
q Seven 128K Main Blocks
Block Diagram – CQFP(F14)
Standard Configuration
WP
WE
OE
A0 – A19
RP
CE1
CE2
CE3
1Mx8
1Mx8
1Mx8
8
I/O0-7
88
I/O8-15 I/O16-23
Pin Description
I/O0-31
Data I/O
CE4 A0–19 Address Inputs
WE Write Enables
CE1-4 Chip Enables
OE Output Enable
1Mx8
WP Write Protect
RP Reset/Powerdown
VCC Power Supply
8
GND
Ground
I/O24-31 NC Not Connected
Block Diagram – CQFP(F14)
Optional Configuration
Pin Description
RP
OE
A0 – A19
WE1
CE1 WE2 CE2 WE3
CE3 WE4 CE4 I/O0-31
A0–19
WE1-4
CE1-4
Data I/O
Address Inputs
Write Enable
Chip Enables
1Mx8
1Mx8
1Mx8
1Mx8
OE Output Enable
RP Reset/Powerdown
VCC Power Supply
8 88 8
GND
Ground
I/O0-7
I/O8-15 I/O16-23 I/O24-31 NC Not Connected
General Description
Utilizing Intel’s SmartVoltage
Boot Block Flash Memory
SmartDie™, the ACT–F1M32 is
a high speed, 32 megabit CMOS
flash multichip module (MCM)
designed for full temperature
range military, space, or high
reliability applications.
The ACT-F1M32 consists of
four high-performance Intel
X28F800BV 8 Mbit (8,388,608
bit) memory die. Each die
contains separately erasable
blocks, including a hardware
lockable boot block (16,384
bytes), two parameter blocks
(8,192 bytes each), and 8 main
blocks (one block of 98,304
bytes and seven blocks of
131,072 bytes) This defines the
boot block flash family
architecture.
The command register is
written by bringing WE to a logic
low level (VIL), while CE is low
and OE is high (VIH). Reading is
eroflex Circuit Technology - Advanced Multichip Modules © SCD1661B REV A 1/16/97
1 page  
AC Characteristics – Write/Erase/Program Operations, CE Controlled
(TA = -55°C to +125°C, VCC = +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Parameter
Symbol
JEDEC
Standard
+3.3V
VCC (2)
Typical
120nS
+4.5V to +5.5V VCC
80nS
100nS
120nS
Min Max Min Max Min Max Min Max
Write Cycle Time
RP High Recovery to CE Low
tAVAV
120
80
100 120
tPHEL
1.5
.45
.45
.45
WE Setup to CE Going Low
tWLEL
0
0
0
0
Boot Block Unlock Setup to CE Going High (1)
tPHHEH
200
100
100
100
VPP Setup to CE Going High (1)
tVPEH
200
100
100
100
Address Setup to CE Going High
tAVEH
90
60
60
60
Data Setup to CE Going High
tDVEH
70
60
60
60
CE Pulse Width
tELEH
90
60
60
60
Data Hold Time from CE High
tEHDX
0
0
0
0
Address Hold Time from CE High
tEHAX
0
0
0
0
WE Hold Time from CE High
tEHWH
0
0
0
0
CE Pulse Width High
tEHEL
20
20
20
20
Duration of Word Write Operation (1) (x32)
tEHQV1
6
6
6
6
Duration of Erase Operation (Boot) (1)
tEHQV2
0.3
0.3
0.3
0.3
Duration of Erase Operation (Parameter) (1)
tEHQV3
0.3
0.3
0.3
0.3
Duration of Erase Operation (Main) (1)
tEHQV4
0.6
0.6
0.6
0.6
VPP Hold from Valid SRD (1)
tQVVL
0
0
0
0
RP VHH Hold from Valid SRD (1)
tQVPH
0
0
0
0
Boot Block Lock Delay (1)
tPHBR
200 100 100 100
NOTES:
1. Sampled, but not 100% tested.
2. Performance at VCC = +4.5V to +5.5V is guaranteed. Performance at VCC = +3.3V is typical (Not Tested).
Units
nS
µS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
µS
Sec
Sec
Sec
nS
nS
nS
AC Characteristics – Read Only Operations
(TA = -55°C to +125°C, VCC = +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Parameter
Symbol
JEDEC
Standard
+3.3V
VCC (2)
Typical
120nS
Min Max
+4.5V to +5.5V VCC
80nS
Min Max
100nS
Min Max
120nS
Min Max
Read Cycle Time
tAVAV
120
80
100
120
Address to Output Delay
tAVQV
120 80
100 120
CE to Output Delay
tELQV
120 80
100 120
RP to Output Delay
tPHQV
1.5 .45 .45 .45
OE to Output Delay
tGLQV
65 40 40 40
CE to Output in Low Z (1)
tELQX
0
0
0
0
CE to Output in High Z (1)
tEHQZ
55 30 30 30
OE to Output in Low Z (1)
tGLQX
0
0
0
0
OE to Output in High Z (1)
tGHQZ
45 30 30 30
Output Hold from Address, CE, or OE Change,
Whichever Occurs First (1)
tOH 0
0
Notes:
1. Guaranteed by design, but not tested.
2. Performance at VCC = +4.5V to +5.5V is guaranteed. Performance at VCC = +3.3V is typical (Not Tested).
0
0
Units
nS
nS
nS
µS
nS
nS
nS
nS
nS
nS
Aeroflex Circuit Technology
5 SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet ACT-F1M32B-100F14C.PDF ] | |
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