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Fairchild Semiconductor - Small Signal Diode

Numéro de référence 1N3070
Description Small Signal Diode
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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1N3070 fiche technique
1N3070
DO-35
COLOR BAND DENOTES CATHODE
Small Signal Diode
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Symbol
Parameter
VRRM
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
TSTG
Storage Temperature Range
TJ Operating Junction Temperature
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Value
200
500
1.0
4.0
-65 to +200
175
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
mA
A
A
°C
°C
Thermal Characteristics
Symbol
PD
RθJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
500
300
Units
mW
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
VR
VF
IR
CT
trr
Parameter
Breakdown Voltage
Forward Voltage
Reverse Leakage
Total Capacitance
Reverse Recovery Time
Test Conditions
IR = 100µA
IF = 100mA
VR = 175V
VR = 175V, TA = 150°C
VR = 0V, f = 1.0MHz
IF = IR = 30mA, RL = 100
Min.
200
Max.
1.0
100
100
5
50
Units
V
V
nA
µA
pF
ns
©2004 Fairchild Semiconductor Corporation
1N3070, Rev. A

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