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Microsemi Corporation - Optimized for Radio Frequency Response

Numéro de référence 1N276
Description Optimized for Radio Frequency Response
Fabricant Microsemi Corporation 
Logo Microsemi Corporation 





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1N276 fiche technique
Gold Bonded
1N276 Germanium Diodes
Optimized for Radio Frequency Response
Can be used in many AM, FM and TV-IF applications, replacing point contact devices.
Applications
AM/FM detectors
Ratio detectors
DO-7 Glass Package
FM discriminators
TV audio detectors
0.018-0.022"
0.458-.558 mm
RF input probes
TV video detectors
Features
1.0"
25.4 mm
(Min.)
Length
0.230-0.30"
5.85-7.62mm
Lower leakage current
Flat junction capacitance
High mechanical strength
At least 1 million hours MTBF
BKC's Sigma-Bond™ plating for
problem free solderability
Absolute Maximum Ratings at T = 25 OC Unless Otherwise Specified
amb
Parameter
Symbols
Peak Inverse Voltage
PIV
Min.
**
Dia
0.085-.107 "
2.16-2.71 mm
Max. Units
70 Volts
Surge Current,t = 1 Second
Peak Operating Current
IS
IFSR
Operating and Storage Temperatures
Electrical Characteristics at T = 25 OC
amb
Parameter
Test Conditions
Forward Voltage Drop IF = 40 mA
T
J & STG
Symbols
VF
Breakdown Voltage
Reverse Leakage
Reverse Leakage
IR = 1.0 mA
V = 10 Volts
R
V = 10 Volts,T = 75 OC
R amb
PIV
I
R
I
R
Junction Capacitance f = 1MHz, V = 0 volt
R
C
J
Reverse Recovery Time trr (If = 5 mA. Irr (rec.)@0.5 mA,Vr= -40 Volts) trr
ForwardRecovery Voltage If = 50 mA PeakSine wave 100 KHz
Vfr
0.4 Amps
270 mA
-60 +90 OC
Min.
Typ.
**
Max. Units
1.0 Volts
** 75 Volts
** 5.0 µA
** 100 µA
0.8 pF
-- *** 300 nSec
--
*** 3.0
Volts
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135

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