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1N1206A Datasheet دیتاشیت PDF دانلود

دیتاشیت - Diotec Semiconductor - Silicon-Power Rectifiers

شماره قطعه 1N1206A
شرح مفصل Silicon-Power Rectifiers
تولید کننده Diotec Semiconductor 
آرم Diotec Semiconductor 


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1N1206A شرح
1N 1199A ... 1N 1206A, 1N 3671, 1N 3673
PBY 271 ... PBY 277
Silicon-Power Rectifiers
Silizium-Leistungs-Gleichrichter
Nominal current – Nennstrom
12 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...1000 V
Metal case – Metallgehäuse
DO-4
Weight approx. – Gewicht ca.
5.5 g
Recommended mounting torque
Empfohlenes Anzugsdrehmoment
18 ± 10% lb.in.
2 ± 10% Nm
Dimensions / Maße in mm
Standard: Cathode to stud / am Gewinde
Index R: Anode to stud / am Gewinde (e.g. 1N 1199 A/R)
Maximum ratings
Type
Typ
1N 1199 A = PBY 271
1N 1200 A = PBY 272
1N 1202 A = PBY 273
1N 1204 A = PBY 274
1N 1206 A = PBY 275
1N 3671 = PBY 276
1N 3673 = PBY 277
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
200
400
600
800
1000
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
60
120
240
480
720
1000
1200
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
Rating for fusing – Grenzlastintegral, t < 10 ms
TC = 100/C
IFAV
f > 15 Hz
IFRM
TA = 25/C
IFSM
TA = 25/C
IFSM
TA = 25/C
i2t
12 A 1)
40 A 1)
220 A
240 A
240 A2s
1) Valid, if the temp. of the stud is kept to 100/C – Gültig, wenn die Temp. am Gewinde auf 100/C gehalten wird
26.03.2002
1

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