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PDF AFP02N8-000 Data sheet ( Hoja de datos )
| Número de pieza | AFP02N8-000 | |
| Descripción | General Purpose PHEMT Chip | |
| Fabricantes | Alpha Industries | |
| Logotipo |  |
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General Purpose PHEMT Chip
Features
s Low Noise Figure, 1.25 dB @ 4 GHz
s High Associated Gain, 15.0 dB @ 4 GHz
s High MAG, > 18 dB @ 4 GHz
s 0.7 µm Ti/Pd/Au Gates
s Passivated Surface
AFP02N8-000
78
50
50 D D
350
125
SG
GS
50
Description
The AFP02N8-000 general purpose PHEMT chip has
excellent gain and noise performance through X band,
making it suitable for a wide range of commercial and military
applications.The device employs 0.7 µm Ti/Pd/Au gates and
surface passivation to ensure a rugged, reliable part.
50
400
20
Absolute Maximum Ratings
Characteristic
Drain to Source Voltage (VDS)
Gate to Source Voltage (VGS)
Drain Current (IDS)
Gate Current (IGS)
Total Power Dissipation (PT)
Storage Temperature (TST)
Channel Temperature (TCH)
Value
6V
-3 V
IDSS
10 µA
300 mW
-65 to +150°C
175°C
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (IDSS)
Transconductance (gm)
Pinch-off Voltage (VP)
Gate to Source
Breakdown Voltage (Vbgs)
Noise Figure (NF)
Associated Gain (GA)
Noise Figure (NF)
Associated Gain (GA)
Test Conditions
VDS = 2 V, VGS = 0 V
VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 0.3 mA
IGS = -200 µA
VDS = 2 V, IDS = 15 mA, F = 4 GHz
VDS = 2 V, IDS = 15 mA, F = 12 GHz
Min.
25.0
40.0
-0.2
-4.0
14.0
8.5
Typ.
45.0
55.0
-0.6
-6.0
1.25
15.0
2.6
9.4
Max.
90.0
-2.0
1.75
3.0
Unit
mA
mS
V
V
dB
dB
dB
dB
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 6/99A
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AFP02N8-000.PDF ] | |
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