DataSheet.es    


PDF AFM04P2-000 Data sheet ( Hoja de datos )

Número de pieza AFM04P2-000
Descripción Ka Band Power GaAs MESFET Chip
Fabricantes Alpha Industries 
Logotipo Alpha Industries Logotipo



Hay una vista previa y un enlace de descarga de AFM04P2-000 (archivo pdf) en la parte inferior de esta página.


Total 3 Páginas

No Preview Available ! AFM04P2-000 Hoja de datos, Descripción, Manual

Ka Band Power GaAs MESFET Chip
AFM04P2-000
Features
I 21 dBm Output Power @ 18 GHz
I High Associated Gain, 9 dB @ 18 GHz
I High Power Added Efficiency, 25%
I Broadband Operation, DC–40 GHz
I 0.25 µm Ti/Pd/Au Gates
I Passivated Surface
I Through-Substrate Via Hole Grounding
Description
The AFM04P2-000 is a high performance power GaAs
MESFET chip having a gate length of 0.25 µm and a
total gate periphery of 400 µm. The device has
excellent gain and power performance through 40 GHz,
making it suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits. It
employs Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged, reliable part. Through-
substrate via holes are incorporated into the chip to
facilitate low inductance grounding of the source for
improved high frequency and high gain performance.
Drain
0.110 mm
Gate
0.327 mm
0.655 mm
Chip thickness = 0.1 mm.
0.110 mm
Absolute Maximum Ratings
Characteristic
Drain to Source Voltage (VDS)
Gate to Source Voltage (VGS)
Drain Current (IDS)
Gate Current (IGS)
Total Power Dissipation (PT)
Storage Temperature (TST)
Channel Temperature (TCH)
Value
6V
-4 V
IDSS
1 mA
700 mW
-65 to +150°C
175°C
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (IDSS)
Transconductance (gm)
Pinch-off Voltage (VP)
Gate to Drain
Breakdown Voltage (Vbgd)
Output Power at 1 dB
Compression (P1 dB)
Gain at 1 dB Compression (G1 dB)
Power Added Efficiency (ηadd)
Output Power at 1 dB
Compression (P1 dB)
Gain at 1 dB Compression (G1 dB)
Power Added Efficiency (ηadd)
Thermal Resistance (ΘJC)
Test Conditions
VDS = 2 V, VGS = 0 V
VDS = 5 V, IDS = 1 mA
IGD = -400 µA
VDS = 5 V, IDS = 70 mA, F = 18 GHz
VDS = 5 V, IDS = 70 mA, F = 30 GHz
TBASE = 25°C
Min.
90.0
60.0
1.0
8.0
Typ.
140.0
80.0
3.0
12.0
21.0
9.0
25.0
20.0
5.0
15.0
Max.
190.0
5.0
250.0
Unit
mA
mS
-V
-V
dBm
dB
%
dBm
dB
%
°C/W
Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email [email protected] www.alphaind.com
Specifications subject to change without notice. 12/99A
1

1 page





PáginasTotal 3 Páginas
PDF Descargar[ Datasheet AFM04P2-000.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
AFM04P2-000Ka Band Power GaAs MESFET ChipAlpha Industries
Alpha Industries

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar