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Numéro de référence | AF2301P | ||
Description | 20V P-Channel Enhancement Mode MOSFET | ||
Fabricant | ETC | ||
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1 Page
20V P-Channel Enhancement Mode MOSFET
AF2301P
Features
Product Summary
- Advanced trench process technology
- High density cell design for ultra low on-resistance
- Excellent thermal and electrical capabilities
- Compact and low profile SOT-23 package
VDS = - 20V
RDS (on), VGS@-4.5V, IDS@-2.8A =130mΩ.
RDS (on), VGS@-2.5V, IDS@-2.0A =190mΩ.
Pin Assignments
3
12
(Top View)
1. G
2. S
3. D
Pin Descriptions
Pin Pin
No. Name
1G
2S
3D
Description
Gate
Source
Drain
Ordering information
A X 2301P X X X
Feature
PN Package
Lead Free
Packing
F :MOSFET
W: SOT23 Blank : Normal
Blank : Tube or Bulk
L : Lead Free Package A : Tape & Reel
Block Diagram
DS
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Jul 20, 2004
1/4
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Pages | Pages 4 | ||
Télécharger | [ AF2301P ] |
No | Description détaillée | Fabricant |
AF2301P | 20V P-Channel Enhancement Mode MOSFET | ETC |
AF2301PW | 20V P-Channel Enhancement Mode MOSFET | ETC |
AF2301PWA | 20V P-Channel Enhancement Mode MOSFET | ETC |
AF2301PWLA | 20V P-Channel Enhancement Mode MOSFET | ETC |
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