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Numéro de référence | 1N4728 | ||
Description | Silicon Power Z-Diodes | ||
Fabricant | Vishay Telefunken | ||
Logo | |||
1 Page
Silicon Power Z–Diodes
Features
D Very sharp reverse characteristic
D Very high stability
D Low reverse current level
D VZ–tolerance ± 5%
1N4728A...1N4761A
Vishay Telefunken
Applications
Voltage stabilization
94 9369
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
Z–current
xTest Conditions
Tamb 50°C
Junction temperature
Storage temperature range
Type
Symbol
PV
IZ
Tj
Tstg
Value
1
PV/VZ
200
–65...+200
Unit
W
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=9.5mm (3/8”), TL=constant
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=200mA
Type
Symbol
RthJA
Value
100
Unit
K/W
Symbol Min Typ Max Unit
VF 1.2 V
Document Number 85587
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
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Pages | Pages 4 | ||
Télécharger | [ 1N4728 ] |
No | Description détaillée | Fabricant |
1N4720 | Silicon Rectifiers | Microsemi Corporation |
1N4720 | Diode Switching 100V 3A 2-Pin TOP HAT | New Jersey Semiconductor |
1N4721 | Silicon Rectifiers | Microsemi Corporation |
1N4721 | Diode Switching 200V 3A 2-Pin TOP HAT | New Jersey Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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