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Numéro de référence | 1N4712 | ||
Description | Silicon Epitaxial Planar Z-Diodes | ||
Fabricant | Vishay Telefunken | ||
Logo | |||
1 Page
Silicon Epitaxial Planar Z–Diodes
Features
D Zener voltage specified at 50 mA
D Maximum delta VZ given from 10 mA to 100 mA
D Very high stability
D Low noise
1N4678...1N4717
Vishay Telefunken
Applications
Voltage stabilization
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Power dissipation
Z–current
l=4mm, TL=25°C
Junction temperature
Storage temperature range
Type
Symbol
PV
IZ
Tj
Tstg
Value
500
PV/VZ
175
–65...+175
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, TL=constant
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=100mA
Type
Symbol
RthJA
Value
300
Unit
K/W
Symbol Min Typ Max Unit
VF 1.5 V
Document Number 85586
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
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Pages | Pages 6 | ||
Télécharger | [ 1N4712 ] |
No | Description détaillée | Fabricant |
1N4710 | 500 mW AXIAL-LEADED ZENER DIODES | Microsemi Corporation |
1N4710 | Zener Diode ( Rectifier ) | General Semiconductor |
1N4710 | Silicon Epitaxial Planar Z-Diodes | Vishay Telefunken |
1N4710 | LOW LEVEL ZENER DIODES ULTRA-LOW CURRENT: 50 A - LOW LEAKAGE | Knox SemiconductorInc |
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