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Numéro de référence | 1N4448 | ||
Description | 500mW 100Volt Switching Diode | ||
Fabricant | Micro Commercial Components | ||
Logo | |||
1 Page
MCC
omponents
21201 Itasca Street Chatsworth
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Features
• Low Current Leakage
• Metalurgically Bonded Construction
• Low Cost
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 35 °C/W Junction To Ambient
1N4448
500mW 100Volt
Switching Diode
DO-35
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
VR 75V
VRM 100V
Average Rectified
Current
IO 150mA Resistive Load
f >= 50Hz
Power Dissipation
Junction
Temperature
PTOT
TJ
500mW
150°C
Peak Forward Surge
Current
IFSM
500mA t<1s
Instantaneous
Forward Voltage
VF 1.0V(MAX) IFM = 100mA;
0.62-0.72V IFM = 5.0mA
Maximum DC
VR=20Volts
Reverse Current At IR 25nA TJ = 25°C
Rated DC Blocking
50µA TJ = 150°C
Voltage
5uA VR=75Volts
Typical Junction
CJ 4pF Measured at
Capacitance
1.0MHz, VR=4.0V
Reverse Recovery Trr 4nS IF=10mA
Time
VR = 6V
RL=100Ω
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
DIM MIN MAX
A --- .166
B --- .079
C --- .020
D 1.000 ---
MM
MIN
---
---
---
25.40
MAX
4.2
2.00
.52
---
NOTE
www.mccsemi.com
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Pages | Pages 3 | ||
Télécharger | [ 1N4448 ] |
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