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Fairchild Semiconductor - High Conductance Fast Diode

Numéro de référence 1N4154
Description High Conductance Fast Diode
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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1N4154 fiche technique
1N4154
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
General Description:
Features:
The high breakdown voltage, fast switching speed and high 500 milliwatt Power Dissipation package.
forward conductance of this diode packaged in a DO-35
miniature Glass Axial leaded package makes it desirable also
Fast Switching Speed,
as a general purpose diode.
Typical capacitance less than 1.0 picofarad.
High Conductance
Ordering:
Fast Diode
13 inch reel, 50 mm (T50R) & 26 mm (T26R) Tape;
10,000 units per reel.
Absolute Maximum Ratings* TA = 25OC unless otherwise noted
Sym
Parameter
Value
Units
Tstg
TJ
PD
ROJA
Wiv
IO
IF
if
iF(surge)
Storage Temperature
Operating Junction Temperature
Total Power Dissipation at TA = 25OC
Linear Derating Factor from TA = 25OC
Thermal Resistance Junction-to-Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current (IF)
Recurrent Peak Forward Current (IF)
Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
-65 to +200
175
500
3.33
300
35
100
300
400
1.0
4.0
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
CATHODE
BAND
OC
OC
mW
mW/OC
OC/W
V
mA
mA
mA
Amp
Amp
0.500 Minimum
12.70 Typ 1.000
MARKING
LOGO
1N
41
54
0.200 (5.08)
0.120 (3.05)
0.022 (0.558) Diameter
0.018 (0.458) Typ 20 mils
0.090 (2.28) Diameter
0.060 (1.53)
Electrical Characteristics TA = 25OC unless otherwise noted
SYM
BV
IR
CHARACTERISTICS
Breakdown Voltage
Reverse Leakage
VF Forward Voltage
CT Capacitance
TRR Reverse Recovery Time
© 1997 Fairchild Semiconductor Corporation
MIN
35
MAX
100
100
1.0
4.0
4.0
UNITS
V
nA
uA
V
pF
ns
TEST CONDITIONS
IR = 5.0 uA
VR = 25 V
VR = 25 V, TA = 150OC
IF = 30 mA
VR = 0.0 V, f = 1.0 MHz
IF = 10 mA VR = 6.0 V
IRR = 1.0 mA, RL = 100 ohms
Revision A - September 21, 1998

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