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1N4151W fiches techniques PDF

General Semiconductor - SMALL SIGNAL DIODES

Numéro de référence 1N4151W
Description SMALL SIGNAL DIODES
Fabricant General Semiconductor 
Logo General Semiconductor 





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1N4151W fiche technique
SOD-123
.022 (0.55)
Cathode Mark
Top View
1N4151W
SMALL SIGNAL DIODES
FEATURES
¨ Silicon Epitaxial Planar Diode
¨ Fast switching diode.
¨ This diode is also available in other
case styles including the SOD-123 case
with the type designation 1N4151W and the Mini-MELF
case with the type designation LL4151.
.067 (1.70)
.055 (1.40)
MECHANICAL DATA
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
min. .010 (0.25)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified.
Reverse Voltage
Peak Reverse Voltage
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 ¡C and f ³ 50 Hz
Surge Forward Current at t < 1 s and Tj = 25 ¡C
Power Dissipation at Tamb = 25 ¡C
Junction Temperature
Storage Temperature Range
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
SYMBOL
VR
VRM
IO
IFSM
Ptot
Tj
TS
VALUE
50
75
150(1)
500
410(1)
150
Ð 65 to +150
UNIT
V
V
mA
mA
mW
¡C
¡C
1/4/99

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