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Número de pieza | 1N4150W | |
Descripción | SMALL SIGNAL DIODES | |
Fabricantes | General Semiconductor | |
Logotipo | ||
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No Preview Available ! 1N4150W
SMALL SIGNAL DIODES
SOD-123
.022 (0.55)
Cathode Mark
Top View
.067 (1.70)
.055 (1.40)
min. .010 (0.25)
FEATURES
¨ Silicon Epitaxial Planar Diode
¨ For general purpose and switching.
¨ This diode is also available in other
case styles including the DO-35 case with the type
designation 1N4150 and the MiniMELF case with the
type designation LL4150.
MECHANICAL DATA
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified.
Peak Reverse Voltage
Maximum Average Rectified Current
Maximum Power Dissipation at Tamb = 25¡C
Maximum Forward Voltage Drop at IF = 200 mA
Maximum Reverse Current at VR = 50 V
Maximum Reverse Recovery Time at IF = IR = 10 to 200 mA, to 0.1 IF
Maximum Junction Temperature
Storage Temperature Range
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
SYMBOL
VRM
IO
Ptot
VF
IR
Trr
Tj
TS
VALUE
50
200
410 (1)
1.0
100
4.0
150
Ð65 to +150
UNIT
V
mA
mW
V
nA
ns
¡C
¡C
1/4/99
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 1N4150W.PDF ] |
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