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Numéro de référence | 1N4150 | ||
Description | Silicon Epitaxial Planar Diode | ||
Fabricant | Vishay Telefunken | ||
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1 Page
Silicon Epitaxial Planar Diode
Features
D Low forward voltage drop
D High forward current capability
1N4150
Vishay Telefunken
Applications
High speed switch and general purpose use in com-
puter and industrial applications
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Forward current
tp=1ms
Average forward current
Power dissipation
Junction temperature
VR=0
xl=4mm, TL=45°C
l=4mm, TL 25°C
Storage temperature range
Type
Symbol
VRRM
VR
IFSM
IF
IFAV
PV
PV
Tj
Tstg
Value
50
50
4
600
300
440
500
175
–65...+175
Unit
V
V
A
mA
mA
mW
mW
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, TL=constant
Symbol
RthJA
Value
350
Unit
K/W
Document Number 85522
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
1 (3)
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Pages | Pages 3 | ||
Télécharger | [ 1N4150 ] |
No | Description détaillée | Fabricant |
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