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1N4148T fiches techniques PDF

TEMIC Semiconductors - Silicon Epitaxial Planar Diodes

Numéro de référence 1N4148T
Description Silicon Epitaxial Planar Diodes
Fabricant TEMIC Semiconductors 
Logo TEMIC Semiconductors 





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1N4148T fiche technique
Silicon Epitaxial Planar Diodes
1N4148.1N4448
Features
D Electrically equivalent diodes:
1N4148 – 1N914
1N4448 – 1N914B
Applications
Extreme fast switches
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
tp=1ms
VR=0
xl=4mm, TL=45°C
l=4mm, TL 25°C
Type
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
l=4mm, TL=constant
Symbol
VRRM
VR
IFSM
IFRM
IF
IFAV
PV
PV
Tj
Tstg
Value
100
75
2
500
300
150
440
500
200
–65...+200
Unit
V
V
A
mA
mA
mA
mW
mW
°C
°C
Symbol
RthJA
Value
350
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
1 (4)

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