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Comchip Technology - Fast Switching Diode

Numéro de référence 1N4148
Description Fast Switching Diode
Fabricant Comchip Technology 
Logo Comchip Technology 





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1N4148 fiche technique
Fast Switching Diode
1N4148 / 1N4448
High Speed
Features
- Fast Switching Speed
- General Purpose Rectification
- Silicon Epitaxial Planar Construction
Mechanical Data
- Case: DO-35
- Terminals: Solderable per MIL-STD-202,
Method 208
- Polarity: Cathode Band
- Weight: 0.13 grams (approx.)
COMCHIP
www.comchiptech.com
DO-35
0.079 (2.0)
Max.
1.0 (25.4)
Min.
0.157 (4.0)
Max.
0.024 (0.60)
Max.
1.0 (25.4)
Min.
Dimensions in inches and (millimeters)
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0ms
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Pd
RqJA
Tj , TSTG
1N4148
1N4448
100
75
53
300 500
150
1.0
2.0
500
1.68
300
-65 to +175
Unit
V
V
V
mA
mA
A
mW
mW/°C
K/W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Maximum Forward Voltage
Maximum Peak Reverse Current
Capacitance
Reverse Recovery Time
1N4148
1N4448
1N4448
Symbol
VFM
IRM
Cj
trr
Min
¾
0.62
¾
¾
¾
¾
Max
1.0
0.72
1.0
5.0
50
30
25
4.0
4.0
Unit
V
mA
mA
mA
nA
pF
ns
Test Condition
IF = 10mA
IF = 5.0mA
IF = 100mA
VR = 75V
VR = 70V, Tj = 150°C
VR = 20V, Tj = 150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = 10mA to IR =1.0mA
VR = 6.0V, RL = 100W
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
MDS0312005A
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