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Numéro de référence | 1N4148 | ||
Description | Silicon Planar Diodes | ||
Fabricant | Diotec Semiconductor | ||
Logo | |||
1 Page
Silicon Planar Diodes
1N 4148, 1N 4150, 1N 4151, 1N 4448
Silizium-Planar-Dioden
Dimensions / Maße in mm
Nominal current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Glass case
Glasgehäuse
Weight approx.
Gewicht ca.
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
150...300 mA
50…100 V
DO-35
SOD-27
0.13 g
see page 16
siehe Seite 16
Maximum ratings
Type
Typ
1N 4148
1N 4150
1N 4151
1N 4448
Reverse voltage
Sperrspannung
VRM [V]
75
50
50
75
Grenzwerte
Reverse Breakdown Voltage
Abbruchspannung
VRRM [V] 1)
100
50
75
100
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Non-repetitive peak fwd. current
Stoßstrom Grenzwert
Max. power dissipation
Max. Verlustleistung
tp = 1 :s
Tj = 25/C
TA = 25/C
Operating junction temp. – Sperrschichttemp.
Storage temperature – Lagerungstemperatur
IFAV
IFRM
IFSM
Ptot
Tj
TS
1N 4148
1N 4448
150 mA2)
1N 4150
300 mA2)
1N 4151
200 mA2)
500 mA2) 600 mA2) 500 mA2)
2000 mA 4000 mA 2000 mA
500 mW 2)
- 50…+ 200/C
- 50…+ 200/C
1) Tested with 100 :A pulses – Gemessen mit 100 :A-Impulsen
2) Valid, if leads are kept at TA = 25/C at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf TA = 25/C gehalten werden
34
01.10.2002
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Pages | Pages 2 | ||
Télécharger | [ 1N4148 ] |
No | Description détaillée | Fabricant |
1N4146 | Diode Data | National Semiconductor |
1N4147 | Diode Data | National Semiconductor |
1N4147 | Diode (spec sheet) | American Microsemiconductor |
1N4148 | 100V, 200mA, High-speed diode | NXP Semiconductors |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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