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Numéro de référence | BC878 | ||
Description | PNP Silicon Darlington Transistors (High current gain High collector current) | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
SIEMENS
PNP Silicon Darlington Transistors
0 High current gain
l High collector current
0 Low collector-emitter Saturation vottage
0 Complementary types: BC 875, BC 877,
BC 879 (NPN)
BC 876
. . . BC 880
1
Type
BC876
BC 878
BC880
Marking
-’
.
Ordering Code
C62702-C943
C62702-C942
C62702-C941
Pin Configuration
1 23
ECB
Packagel)
TO-92
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation. TC = 99 % 2)
Junction temperature
Storage temperature range
Symbol Values
BC 876
VCM 4 5
vcrm 6 0
VEB0
IC
ichl
Ie
IBM
P l~(
Ti
Tstp
BC 878
60
BC 880
80
8 0 100
5
1
2
100
200
0.8 (1)
150
-65 . . . + 150
Unit
V
A
mA’
W
%
Thermal Resistance
Junction - ambientz)
Junction - case 3)
RthJA
RäX
<156
s75
Klw
1) For detailed information sec chapter Package Outtines.
2) If transistors wftf-~ max. 4 mm lead fangth are fixad on PCBs with a min. 10 mm x 10 mm larga coppar
area for the collector terminal, Rnu = 125 KAV and thus P IOIMX = 1 W at TA = 25 ‘C.
3) Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm.
387
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Pages | Pages 4 | ||
Télécharger | [ BC878 ] |
No | Description détaillée | Fabricant |
BC875 | NPN Darlington transistors | NXP Semiconductors |
BC875 | NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage | Siemens Semiconductor Group |
BC876 | PNP Silicon Darlington Transistors (High current gain High collector current) | Siemens Semiconductor Group |
BC877 | NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage | Siemens Semiconductor Group |
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